Datasheet > AT49F040B

AT49F040B

更新时间： 2024-09-20 05:07:15

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存
页数	文件大小	规格书
19页	239K
描述
4-megabit (512K x 8) 5-volt Only Flash Memory

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数据手册

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AT49F040B 数据手册

Features

• Single Supply for Read and Write: 4.5 to 5.5V

• Fast Read Access Time – 55 ns

• Internal Program Control and Timer

• Flexible Sector Architecture

– One 16K Bytes Boot Sector with Programming Lockout

– Two 8K Bytes Parameter Sectors

– Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes)

• Fast Erase Cycle Time – 8 Seconds

• Byte-by-Byte Programming – 12 µs/Byte Typical

• Hardware Data Protection

• DATA Polling or Toggle Bit for End of Program Detection

• Low Power Dissipation

– 20 mA Active Current

– 25 µA CMOS Standby Current

• Minimum 100,000 Write Cycles

4-megabit

(512K x 8)

5-volt Only

Flash Memory

1. Description

AT49F040B

The AT49F040B is a 5-volt-only in-system reprogrammable Flash Memory. Its

4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to

55 ns with power dissipation of just 110 mW over the commercial temperature range.

When the device is deselected, the CMOS standby current is less than 25 µA. To

allow for simple in-system reprogrammability, the AT49F040B does not require high

input voltages for programming. Five-volt-only commands determine the read and

programming operation of the device. Reading data out of the device is similar to

reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus conten-

tion. Reprogramming the AT49F040B is performed by erasing a sector of data and

then programming on a byte by byte basis. The byte programming time is a fast 12 µs.

The end of a program or erase cycle can be optionally detected by the DATA polling

or toggle bit feature. Once the end of a byte program cycle has been detected, a new

access for a read or program can begin. The typical number of program and erase

cycles is in excess of 100,000 cycles.

The device is erased by executing a chip erase or a sector erase command sequence;

the device internally controls the erase operations. The memory array of the

AT49F040B is organized into two 8K byte parameter sectors, eight main memory sec-

tors, and one boot sector.

The device has the capability to protect the data in the boot sector; this feature is

enabled by a command sequence. The 16K-byte boot sector includes a reprogram-

ming lock out feature to provide data integrity. The boot sector is designed to contain

user secure code, and when the feature is enabled, the boot sector is permanently

protected from being reprogrammed.

3606A–FLASH–12/05

12 3 4 5 6 7...19

中文翻译

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与AT49F040B相关器件

型号	品牌	获取价格	描述	数据表
AT49F040B-55JU	ATMEL	获取价格	Flash, 512KX8, 55ns, PQCC32, GREEN, PLASTIC, MS-016AE, LCC-32
AT49F040B-55TU	ATMEL	获取价格	Flash, 512KX8, 55ns, PDSO32, 8 X 20 MM, GREEN, PLASTIC, MO-142, TSOP1-32
AT49F040T	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
AT49F040T-12JC	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
AT49F040T-12JI	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
AT49F040T-12PC	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
AT49F040T-12PI	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
AT49F040T-12TC	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
AT49F040T-12TI	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
AT49F040T-70JC	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only CMOS Flash Memory

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