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AT49BV512-70TL PDF预览

AT49BV512-70TL

更新时间: 2024-11-06 19:21:11
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路
页数 文件大小 规格书
17页 173K
描述
Flash, 64KX8, 70ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32

AT49BV512-70TL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:8 X 20 MM, PLASTIC, TSOP1-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最长访问时间:70 ns
JESD-30 代码:R-PDSO-G32JESD-609代码:e3
长度:18.4 mm内存密度:524288 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30类型:NOR TYPE
宽度:8 mmBase Number Matches:1

AT49BV512-70TL 数据手册

 浏览型号AT49BV512-70TL的Datasheet PDF文件第2页浏览型号AT49BV512-70TL的Datasheet PDF文件第3页浏览型号AT49BV512-70TL的Datasheet PDF文件第4页浏览型号AT49BV512-70TL的Datasheet PDF文件第5页浏览型号AT49BV512-70TL的Datasheet PDF文件第6页浏览型号AT49BV512-70TL的Datasheet PDF文件第7页 
Features  
Single Supply Voltage Range, 2.7V to 3.6V  
Single Supply for Read and Write  
Fast Read Access Time – 70 ns  
Internal Program Control and Timer  
8K Bytes Boot Block with Lockout  
Fast Erase Cycle Time – 10 Seconds  
Byte-by-Byte Programming – 30 µs/Byte Typical  
Hardware Data Protection  
DATA Polling for End of Program Detection  
Low Power Dissipation  
– 25 mA Active Current  
– 50 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
512K (64K x 8)  
Single 2.7-volt  
Battery-Voltage™  
Flash Memory  
Description  
The AT49BV512 is a 3-volt only, 512K Flash memories organized as 65,536 words of  
8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the  
devices offer access times to 70 ns with power dissipation of just 90 mW over the  
commercial temperature range. When the devices are deselected, the CMOS standby  
current is less than 50 µA.  
AT49BV512  
To allow for simple in-system reprogrammability, the AT49BV512 does not require  
high input voltages for programming. Three-volt only commands determine the read  
and programming operation of the device. Reading data out of the device is similar to  
reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing  
DIP Top View  
Pin Configurations  
NC  
NC  
A15  
A12  
A7  
1
2
3
4
5
6
7
8
9
32 VCC  
31 WE  
30 NC  
29 A14  
28 A13  
27 A8  
Pin Name  
A0 - A15  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
A6  
A5  
26 A9  
OE  
A4  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
A3  
WE  
A2 10  
A1 11  
I/O0 - I/O7  
NC  
A0 12  
I/O0 13  
I/O1 14  
I/O2 15  
GND 16  
VSOP Top View (8 x 14 mm) or  
TSOP Top View (8 x 20 mm)  
Type 1  
PLCC Top View  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
A10  
CE  
A8  
3
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 A14  
A13  
A14  
NC  
WE  
VCC  
NC  
NC  
A15  
A12  
A7  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
5
6
7
8
A2 10  
A1 11  
A0 12  
I/O0 13  
9
10  
11  
12  
13  
14  
15  
16  
A6  
A1  
A5  
A2  
Rev. 1026E–FLASH–06/02  
A4  
A3  

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