Datasheet > AT49BV080

AT49BV080

更新时间： 2024-11-09 22:16:51

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存电池
页数	文件大小	规格书
12页	204K
描述
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT49BV080 数据手册

Features

Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)

Fast Read Access Time - 120 ns

Internal Program Control and Timer

16K bytes Boot Block With Lockout

Fast Erase Cycle Time - 10 seconds

Byte-By-Byte Programming - 30 µs/Byte Typical

Hardware Data Protection

DATA Polling For End Of Program Detection

•

Low Power Dissipation

•

8-Megabit

- 25 mA Active Current

- 50 µA CMOS Standby Current

(1M x 8)

Typical 10,000 Write Cycles

Small Packaging

•

- 8 x 14 mm CBGA

Single 2.7-volt

Battery-Voltage

Flash Memory

Description

The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 mega-

bits of memory are organized as 1,024,576 words by 8 bits. Manufactured with At-

mel’s advanced nonvolatile CMOS technology, the devices offer access times to 120

ns with power dissipation of just 90 mW over the commercial temperature range.

When the device is deselected, the CMOS standby current is less than 50 µA.

AT49BV080

AT49BV080T

AT49LV080

AT49LV080T

The device contains a user-enabled "boot block" protection feature. Two versions of

the feature are available: the AT49BV/LV080 locates the boot block at lowest order

addresses ("bottom boot"); the AT49BVLV080T locates it at highest order addresses

("top boot").

(continued)

TSOP Top View

Pin Configurations

Type 1

Pin Name

A0 - A19

Function

Addresses

Chip Enable

Output Enable

Write Enable

Reset

RESET

RDY/BUSY

I/O0 - I/O7

Ready/Busy Output

Data Inputs/Outputs

CBGA Top View

SOIC

RESET

A11

A10

VCC

A12

A13

A14

A15

A16

A17

A18

A19

A5 A8 A11 NC A12 A15 A17

A4 A7 A10 VCC A13 NC A18

A6 A9 RST CE A14 A16 A19

A3 I/O1 NC VCC I/O4 I/O7 NC

A2 A0 I/O3 GND I/O6 OE NC

A1 I/O0 I/O2 GND I/O5 RY/BY WE

I/O0

I/O1

I/O2

I/O3

GND

RDY/BUSY

I/O7

I/O6

I/O5

I/O4

VCC

0812A–8/97

12 3 4 5 6 7...12

中文翻译

下载PDF

与AT49BV080相关器件

型号	品牌	获取价格	描述	数据表
AT49BV080-12CC	ATMEL	获取价格	8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV080-12CI	ATMEL	获取价格	8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV080-12RC	ATMEL	获取价格	8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV080-12RI	ATMEL	获取价格	8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV080-12TC	ETC	获取价格	x8 Flash EEPROM
AT49BV080-12TI	ATMEL	获取价格	8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV080-15CC	ATMEL	获取价格	8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV080-15CI	ATMEL	获取价格	8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV080-15RC	ATMEL	获取价格	8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV080-15RI	ATMEL	获取价格	8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory

与AT49BV080相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

24
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

24
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

50
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

40

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49BV080

AT49BV080 数据手册

与AT49BV080相关器件

与AT49BV080相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49BV080

AT49BV080 数据手册

与AT49BV080相关器件

与AT49BV080相关文章

您还可以找

您在本页遇到什么问题？