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AT45DB081D-SU-SL954 PDF预览

AT45DB081D-SU-SL954

更新时间: 2024-11-29 12:25:03
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
53页 1867K
描述
8-megabit 2.5V or 2.7V DataFlash

AT45DB081D-SU-SL954 数据手册

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Features  
Single 2.5V or 2.7V to 3.6V Supply  
RapidS Serial Interface: 66MHz Maximum Clock Frequency  
– SPI Compatible Modes 0 and 3  
User Configurable Page Size  
– 256-Bytes per Page  
– 264-Bytes per Page  
– Page Size Can Be Factory Pre-configured for 256-Bytes  
Page Program Operation  
– Intelligent Programming Operation  
– 4,096 Pages (256/264-Bytes/Page) Main Memory  
Flexible Erase Options  
8-megabit  
2.5V or 2.7V  
DataFlash  
– Page Erase (256-Bytes)  
– Block Erase (2-Kbytes)  
– Sector Erase (64-Kbytes)  
– Chip Erase (8Mbits)  
AT45DB081D  
Two SRAM Data Buffers (256-/264-Bytes)  
– Allows Receiving of Data while Reprogramming the Flash Array  
Continuous Read Capability through Entire Array  
– Ideal for Code Shadowing Applications  
Low-power Dissipation  
– 7mA Active Read Current Typical  
– 25μA Standby Current Typical  
– 15μA Deep Power Down Typical  
Hardware and Software Data Protection Features  
– Individual Sector  
Sector Lockdown for Secure Code and Data Storage  
– Individual Sector  
Security: 128-byte Security Register  
– 64-byte User Programmable Space  
– Unique 64-byte Device Identifier  
JEDEC Standard Manufacturer and Device ID Read  
100,000 Program/Erase Cycles Per Page Minimum  
Data Retention – 20 Years  
Industrial Temperature Range  
Green (Pb/Halide-free/RoHS Compliant) Packaging Options  
1. Description  
The Adesto® AT45DB081D is a 2.5V or 2.7V, serial-interface Flash memory  
ideally suited for a wide variety of digital voice-, image-, program code- and data-stor-  
age applications. The AT45DB081D supports RapidSserial interface for  
applications requiring very high speed operations. RapidS serial interface is SPI com-  
patible for frequencies up to 66MHz. Its 8,650,752-bits of memory are organized as  
4,096 pages of 256-bytes or 264-bytes each. In addition to the main memory, the  
AT45DB081D also contains two SRAM buffers of 256-/264-bytes each. The buffers  
allow the receiving of data while a page in the main Memory is being reprogrammed,  
as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil-  
ity) is easily handled with a self-contained three step read-modify-write operation.  
Unlike conventional Flash memories that are accessed randomly with multiple  
3596O–DFLASH–1/2013  

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