Datasheet > AT45DB081E

AT45DB081E

更新时间： 2024-11-30 14:58:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
97页	2100K
描述
8Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory

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AT45DB081E 数据手册

Datasheet

AT45DB081E

8-Mbit DataFlash (with Extra 256 kbits), 1.7 V Minimum SPI Serial Flash Memory

Features

• Single 1.7 V - 3.6 V supply

• Serial Peripheral Interface (SPI) compatible

• Supports SPI modes 0 and 3

• Supports RapidS^™operation

• Continuous read capability through entire array

• Up to 85 MHz

• Low-power read option up to 15 MHz

• Clock-to-output time (t_V) of 6 ns maximum

• User configurable page size

• 256 bytes per page

• 264 bytes per page (default)

• Page size can be factory pre-configured for 256 bytes

• Two fully independent SRAM data buffers (256/264 bytes)

• Allows receiving data while reprogramming the main memory array

• Flexible programming options

• Byte/Page Program (1 to 256/264 bytes) directly into main memory

• Buffer Write

• Buffer to Main Memory Page Program

• Flexible erase options

• Page Erase (256/264 bytes)

• Block Erase (2 kB)

• Sector Erase (64 kB)

• Chip Erase (8 Mbits)

• Program and Erase Suspend/Resume

• Advanced hardware and software data protection features

• Individual sector protection

• Individual sector lockdown to make any sector permanently read-only

• 128-byte, One-Time Programmable (OTP) Security Register

• 64 bytes factory programmed with a unique identifier

• 64 bytes user programmable

• Hardware and software controlled reset options

• JEDEC Standard Manufacturer and Device ID Read

• Low power dissipation

• 400 nA Ultra-Deep Power-Down current (typical)

• 4.5 µA Deep Power-Down current (typical)

• 25 µA Standby current (typical)

• 11 mA Active Read current (typical at 20 MHz)

• Endurance: 100,000 program/erase cycles per page minimum

• Data retention: 20 years

• Complies with full industrial temperature range

• Green (Pb/Halide-free/RoHS compliant) packaging options

• 8-lead SOIC (0.150" wide and 0.208" wide)

• 8-pad Ultra-thin DFN (5 x 6 x 0.6 mm)

• 8-ball (2 x4 array) Wafer Level Chip Scale Package

• Die in Wafer Form

DS-AT45DB081E-028 Rev. M

8/16/22

Page 1

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中文翻译

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与AT45DB081E相关器件

型号	品牌	获取价格	描述	数据表
AT45DB081E_14	ETC	获取价格	8-Mbit DataFlash (with Extra 256-Kbits), 1.7V Minimum SPI Serial Flash Memory
AT45DB081E-DWF	DIALOG	获取价格	8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory
AT45DB081E-MHN2B-T	DIALOG	获取价格	8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory
AT45DB081E-MHN-B	ETC	获取价格	8-Mbit DataFlash (with Extra 256-Kbits), 1.65V Minimum SPI Serial Flash Memory
AT45DB081E-MHN-T	DIALOG	获取价格	8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory
AT45DB081E-MHN-Y	DIALOG	获取价格	8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory
AT45DB081E-SHN2B-T	DIALOG	获取价格	8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory
AT45DB081E-SHN-B	DIALOG	获取价格	8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory
AT45DB081E-SHNHA-T	DIALOG	获取价格	8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory
AT45DB081E-SHNHC-T	DIALOG	获取价格	8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory

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