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AT29C040A-20TU PDF预览

AT29C040A-20TU

更新时间： 2024-09-20 15:28:07
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路
页数 文件大小 规格书
17页 346K
描述
Flash, 512KX8, 200ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32

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AT29C040A-20TU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
针数：32Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.78最长访问时间：200 ns
其他特性：AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION启动块：BOTTOM/TOP
JESD-30 代码：R-PDSO-G32JESD-609代码：e3
长度：18.4 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：32字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260编程电压：5 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30类型：NOR TYPE
宽度：8 mm最长写入周期时间 (tWC)：10 ms
Base Number Matches：1

AT29C040A-20TU 数据手册

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Features  
• Fast Read Access Time – 90 ns  
• 5-volt Only Reprogramming  
• Sector Program Operation  
– Single Cycle Reprogram (Erase and Program)  
– 2048 Sectors (256 Bytes/Sector)  
– Internal Address and Data Latches for 256 Bytes  
• Internal Program Control and Timer  
• Hardware and Software Data Protection  
• Two 16K Bytes Boot Blocks with Lockout  
• Fast Sector Program Cycle Time – 10 ms  
• DATA Polling for End of Program Detection  
• Low Power Dissipation  
4-megabit  
(512K x 8)  
5-volt Only  
256-byte Sector  
Flash Memory  
– 40 mA Active Current  
– 100 µA CMOS Standby Current  
• Typical Endurance > 10,000 Cycles  
• Single 5V 10% Supply  
• CMOS and TTL Compatible Inputs and Outputs  
• Green (Pb/Halide-free) Packaging Option  
AT29C040A  
1. Description  
The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times up to 90 ns, and a low 220 mW power dissipation.  
When the device is deselected, the CMOS standby current is less than 100 µA. The  
device endurance is such that any sector can typically be written to in excess of  
10,000 times. The programming algorithm is compatible with other devices in Atmel’s  
5-volt only Flash family.  
To allow for simple in-system reprogrammability, the AT29C040A does not require  
high input voltages for programming. Five-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an  
EPROM. Reprogramming the AT29C040A is performed on a sector basis; 256 bytes  
of data are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 256 bytes of data are internally  
latched, freeing the address and data bus for other operations. Following the initiation  
of a program cycle, the device will automatically erase the sector and then program  
the latched data using an internal control timer. The end of a program cycle can be  
detected by DATA polling of I/O7. Once the end of a program cycle has been  
detected, a new access for a read or program can begin.  
0333K–FLASH–2/05  
1234567...17

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AT29C040A-90PI ATMEL

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AT29C040A-90TI ATMEL

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AT29C040A-90TU ATMEL

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