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AT29BV010A-12TU

更新时间： 2024-11-30 06:38:19
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池
页数 文件大小 规格书
16页 364K
描述
1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

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AT29BV010A-12TU 数据手册

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Features  
• Single Supply Voltage, Range 2.7V to 3.6V  
• Single Supply for Read and Write  
• Software Protected Programming  
• Fast Read Access Time – 120 ns  
• Low Power Dissipation  
– 15 mA Active Current  
– 50 µA CMOS Standby Current  
• Sector Program Operation  
1-Megabit  
(128K x 8)  
Single 2.7-volt  
Battery-Voltage  
Flash Memory  
– Single Cycle Reprogram (Erase and Program)  
– 1024 Sectors (128 Bytes/Sector)  
– Internal Address and Data Latches for 128 Bytes  
• Two 8K Bytes Boot Blocks with Lockout  
• Fast Sector Program Cycle Time – 20 ms Max  
• Internal Program Control and Timer  
• DATA Polling for End of Program Detection  
• Typical Endurance > 10,000 Cycles  
• CMOS and TTL Compatible Inputs and Outputs  
• Green (Pb/Halide-free) Packaging Option  
AT29BV010A  
1. Description  
The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable  
Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words  
by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol-  
ogy, the device offers access times to 120 ns, and a low 54 mW power dissipation.  
When the device is deselected, the CMOS standby current is less than 50 µA. The  
device endurance is such that any sector can typically be written to in excess of  
10,000 times. The programming algorithm is compatible with other devices in Atmel’s  
Low Voltage Flash family of products.  
To allow for simple in-system reprogrammability, the AT29BV010A does not require  
high input voltages for programming. The device can be operated with a single 2.7V to  
3.6V supply. Reading data out of the device is similar to reading from an EPROM.  
Reprogramming the AT29BV010A is performed on a sector basis; 128 bytes of data  
are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 128 bytes of data are captured at  
microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automati-  
cally erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
0519F–FLASH–9/08  
1234567...16

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AT29BV010A-12TU 替代型号

型号 品牌 替代类型 描述 数据表
AT29BV010A-12TC ATMEL

类似代替

 1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash
AT29BV010A-12TI ATMEL

功能相似

 1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

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