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AT29BV010A-20 PDF预览

AT29BV010A-20

更新时间: 2024-11-29 22:39:15
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池
页数 文件大小 规格书
10页 494K
描述
1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

AT29BV010A-20 数据手册

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AT29BV010A  
Features  
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Software Protected Programming  
Fast Read Access Time - 200 ns  
Low Power Dissipation  
15 mA Active Current  
20 µA CMOS Standby Current  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
1024 Sectors (128 bytes/sector)  
1 Megabit  
(128K x 8)  
Internal Address and Data Latches for 128-Bytes  
Two 8 KB Boot Blocks with Lockout  
Fast Sector Program Cycle Time - 20 ms Max.  
Single 2.7-volt  
Battery-Voltage  
CMOS Flash  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Description  
The AT29BV010A is a 2.7-volt-only in-system Flash Programmable and Erasable  
Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words  
by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol-  
ogy, the device offers access times up to 200 ns, and a low 54 mW power dissipation.  
When the device is deselected, the CMOS standby current is less than 20 µA. The  
device endurance is such that any sector can typically be written to in excess of  
10,000 times. The programming algorithm is compatible with other devices in Atmel’s  
Low Voltage Flash family of products.  
(continued)  
AT29BV010A  
Pin Configurations  
Pin Name Function  
PLCC Top View  
A0 - A16  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC No Connect  
TSOP Top View  
Type 1  
0519B  
4-3  

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