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AT29BV010A-25JI PDF预览

AT29BV010A-25JI

更新时间: 2024-11-29 22:39:15
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池
页数 文件大小 规格书
10页 494K
描述
1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

AT29BV010A-25JI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ, LDCC32,.5X.6针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.91
最长访问时间:250 ns启动块:BOTTOM/TOP
命令用户界面:NO数据轮询:YES
JESD-30 代码:R-PQCC-J32JESD-609代码:e0
长度:13.97 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:2功能数量:1
部门数/规模:1,1,1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:3.556 mm部门规模:8K,112K,8K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:11.43 mm最长写入周期时间 (tWC):20 ms
Base Number Matches:1

AT29BV010A-25JI 数据手册

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AT29BV010A  
Features  
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Software Protected Programming  
Fast Read Access Time - 200 ns  
Low Power Dissipation  
15 mA Active Current  
20 µA CMOS Standby Current  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
1024 Sectors (128 bytes/sector)  
1 Megabit  
(128K x 8)  
Internal Address and Data Latches for 128-Bytes  
Two 8 KB Boot Blocks with Lockout  
Fast Sector Program Cycle Time - 20 ms Max.  
Single 2.7-volt  
Battery-Voltage  
CMOS Flash  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Description  
The AT29BV010A is a 2.7-volt-only in-system Flash Programmable and Erasable  
Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words  
by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol-  
ogy, the device offers access times up to 200 ns, and a low 54 mW power dissipation.  
When the device is deselected, the CMOS standby current is less than 20 µA. The  
device endurance is such that any sector can typically be written to in excess of  
10,000 times. The programming algorithm is compatible with other devices in Atmel’s  
Low Voltage Flash family of products.  
(continued)  
AT29BV010A  
Pin Configurations  
Pin Name Function  
PLCC Top View  
A0 - A16  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC No Connect  
TSOP Top View  
Type 1  
0519B  
4-3  

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AT29BV010A-25TI ATMEL

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1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash
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AT29BV010A-30 ATMEL

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1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash