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AT28HC256-70 PDF预览

AT28HC256-70

更新时间: 2024-11-05 22:19:55
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器
页数 文件大小 规格书
12页 731K
描述
256 32K x 8 High Speed CMOS E2PROM

AT28HC256-70 数据手册

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AT28HC256  
Features  
Fast Read Access Time - 70 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64-Bytes  
Internal Control Timer  
Fast Write Cycle Times  
Page Write Cycle Time: 3 ms or 10 ms Maximum  
1 to 64-Byte Page Write Operation  
Low Power Dissipation  
80 mA Active Current  
3 mA Standby Current  
256 (32K x 8)  
High Speed  
CMOS  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 104 or 105 Cycles  
Data Retention: 10 Years  
E2PROM  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-Wide Pinout  
Full Military, Commercial, and Industrial Temperature Ranges  
Description  
The AT28HC256 is a high-performance Electrically Erasable and Programmable  
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256  
offers access times to 70 ns with power dissipation of just 440 mW. When the  
AT28HC256 is deselected, the standby current is less than 5 mA.  
(continued)  
Pin Configurations  
Pin Name  
A0 - A14  
CE  
Function  
TSOP  
Top View  
Addresses  
AT28HC256  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
CERDIP, PDIP,  
FLATPACK  
Top View  
PGA  
Top View  
LCC, PLCC  
Top View  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
0007F  
2-279  

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