Datasheet > AT28HC256-70FM/883

AT28HC256-70FM/883

更新时间： 2024-11-06 20:01:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数	文件大小	规格书
24页	452K
描述
EEPROM, 32KX8, 70ns, Parallel, CMOS, CDFP28, BOTTOM BRAZED, CERAMIC, DFP-28

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AT28HC256-70FM/883 技术参数

是否无铅：	含铅	生命周期：	Transferred
包装说明：	DFP,	Reach Compliance Code：	unknown
ECCN代码：	3A001.A.2.C	HTS代码：	8542.32.00.51
风险等级：	5.65	最长访问时间：	70 ns
其他特性：	AUTOMATIC WRITE	JESD-30 代码：	R-CDFP-F28
长度：	18.285 mm	内存密度：	262144 bit
内存集成电路类型：	EEPROM	内存宽度：	8
功能数量：	1	端子数量：	28
字数：	32768 words	字数代码：	32000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-55 °C	组织：	32KX8
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	DFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK
并行/串行：	PARALLEL	编程电压：	5 V
筛选级别：	MIL-STD-883	座面最大高度：	3.02 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子形式：	FLAT	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	10.16 mm
最长写入周期时间 (tWC)：	10 ms	Base Number Matches：	1

AT28HC256-70FM/883 数据手册

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Features

• Fast Read Access Time – 70 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

• Fast Write Cycle Times

– Page Write Cycle Time: 3 ms or 10 ms Maximum

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

256K (32K x 8)

High-speed

Parallel

– 80 mA Active Current

– 3 mA Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10⁴or 10⁵Cycles

– Data Retention: 10 Years

EEPROM

• Single 5V 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Full Military and Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

AT28HC256

1. Description

The AT28HC256 is a high-performance electrically erasable and programmable read-

only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers

access times to 70 ns with power dissipation of just 440 mW. When the AT28HC256

is deselected, the standby current is less than 5 mA.

The AT28HC256 is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64

bytes of data are internally latched, freeing the addresses and data bus for other oper-

ations. Following the initiation of a write cycle, the device will automatically write the

latched data using an internal control timer. The end of a write cycle can be detected

by DATA Polling of I/O7. Once the end of a write cycle has been detected a new

access for a read or write can begin.

Atmel’s 28HC256 has additional features to ensure high quality and manufacturability.

The device utilizes internal error correction for extended endurance and improved

data retention characteristics. An optional software data protection mechanism is

available to guard against inadvertent writes. The device also includes an extra

64 bytes of EEPROM for device identification or tracking.

0007N–PEEPR–9/09

12 3 4 5 6 7...24

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与AT28HC256-70FM/883相关器件

型号	品牌	获取价格	描述	数据表
AT28HC256-70JC	ATMEL	获取价格	256 32K x 8 High Speed Parallel EEPROMs
AT28HC256-70JCT/R	ATMEL	获取价格	EEPROM, 32KX8, 70ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC256-70JI	ATMEL	获取价格	256 32K x 8 High Speed Parallel EEPROMs
AT28HC256-70JIT/R	ATMEL	获取价格	EEPROM, 32KX8, 70ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC256-70JJT/R	ATMEL	获取价格	EEPROM, 32KX8, 70ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC256-70JLT/R	ATMEL	获取价格	EEPROM, 32KX8, 70ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC256-70JU	MICROCHIP	获取价格	IC EEPROM 256KBIT 70NS 32PLCC
AT28HC256-70JU-T	MICROCHIP	获取价格	70NS, PLCC, IND TEMP, GREEN
AT28HC256-70LJ	ATMEL	获取价格	EEPROM, 32KX8, 70ns, Parallel, CMOS, CQCC32
AT28HC256-70LL	ATMEL	获取价格	EEPROM, 32KX8, 70ns, Parallel, CMOS, CQCC32

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