Datasheet > AT28C04E-25DM/883

AT28C04E-25DM/883

更新时间： 2024-11-04 23:32:27

品牌	Logo	应用领域
其他 - ETC		内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	176K
描述
x8 EEPROM

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中文翻译

获取价格

数据手册

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AT28C04E-25DM/883 数据手册

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Features

• Fast Read Access Time - 150 ns

• Fast Byte Write - 200 µs or 1 ms

• Self-Timed Byte Write Cycle

– Internal Address and Data Latches

– Internal Control Timer

– Automatic Clear Before Write

• Direct Microprocessor Control

– DATA POLLING

• Low Power

– 30 mA Active Current

16K (2K x 8)

Parallel

– 100 µA CMOS Standby Current

• High Reliability

– Endurance: 10⁴or 10⁵Cycles

– Data Retention: 10 Years

EEPROMs

• 5V ± 10% Supply

• CMOS & TTL Compatible Inputs and Outputs

• JEDEC Approved Byte Wide Pinout

• Commercial and Industrial Temperature Ranges

AT28C16

Description

The AT28C16 is a low-power, high-performance Electrically Erasable and Program-

mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory

organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable

(continued)

nonvolatile CMOS technology.

Pin Configurations

Pin Name

A0 - A10

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

I/O0 - I/O7

Don’t Connect

PLCC

Top View

PDIP, SOIC

Top View

24 VCC

23 A8

22 A9

29 A8

28 A9

27 NC

26 NC

25 OE

24 A10

23 CE

22 I/O7

21 I/O6

21 WE

20 OE

19 A10

18 CE

17 I/O7

16 I/O6

15 I/O5

14 I/O4

13 I/O3

A1 10

A0 11

I/O0

I/O1 10

I/O2 11

GND 12

NC 12

I/O0 13

Rev. 0540B–10/98

Note: PLCC package pins 1 and 17

are DON’T CONNECT.

12 3 4 5 6 7...12

中文翻译

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