Datasheet > AT-30533-TR2G

AT-30533-TR2G

更新时间： 2024-09-16 21:03:03

品牌	Logo	应用领域
安华高科 - AVAGO		开关光电二极管晶体管
页数	文件大小	规格书
10页	261K
描述
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AT-30533-TR2G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.7	其他特性：	HIGH RELIABILITY
最大集电极电流 (IC)：	0.008 A	集电极-发射极最大电压：	5.5 V
配置：	SINGLE	最小直流电流增益 (hFE)：	70
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.1 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

AT-30533-TR2G 数据手册

AT-30511, AT-30533

Low Current, High Performance NPN

Silicon Bipolar Transistors

Data Sheet

Features

Description

• High Performance Bipolar Transistor Optimized for

Low Current, Low Voltage Operation

Avago’s AT-30511 and AT-30533 are high performance

NPN bipolar transistors that have been optimized for

maximum f_Tat low voltage operation, making them ideal

for use in battery powered applications in wireless mar-

kets. The AT-30533 uses the 3 lead SOT-23, while the AT-

30511 places the same die in the higher performance 4

lead SOT-143. Both packages are industry standard, and

compatible with high volume surface mount assembly

techniques.

• 900 MHz Performance:

AT-30511: 1.1 dB NF, 16dBG_A

AT-30533: 1.1 dB NF, 13dBG_A

• Characterized for End-Of-Life Battery Use (2.7 V)

• SOT-23 and SOT-143 SMT Plastic Packages

• Tape-And-Reel Packaging Option Available

• Lead-free

The 3.2 micron emitter-to-emitter pitch and reduced para-

sitic design of these transistors yields extremely high per-

formance products that can perform a multiplicity of tasks.

The 5 emitter ﬁnger interdigitated geometry yields an ex-

tremely fast transistor with high gain and low operating

currents.

Pin Connections and Package Marking

EMITTER COLLECTOR

305x

Optimized performance at 2.7 V makes these devices

ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery op-

erated systems as an LNA, gain stage, buﬀer, oscillator, or

active mixer. Typical ampliﬁer designs at 900 MHz yield

1.3 dB noise ﬁgures with 13dB or more associated gain at

a 2.7 V, 1 mA bias. Voltage breakdowns are high enough

for use at 5 volts. High gain capability at 1V, 1 mA makes

these devices a good ﬁt for 900 MHz pager applications.

BASE

EMITTER

SOT-143 (AT-30511)

COLLECTOR

305x

The AT-3 series bipolar transistors are fabricated using

an optimized version of Avago’s 10 GHz f_T, 30 GHz f_MAX

Self-Aligned-Transistor (SAT) process. The die are nitride

passivated for surface protection. Excellent device uni-

formity, performance and reliability are produced by the

use of ion-implantation, self-alignment techniques, and

gold metalization in the fabrication of these devices.

BASE

EMITTER

SOT-23 (AT-30533)

Notes:

Top View. Package Marking provides orientation and identiﬁcation.

"x" is the date code.

12 3 4 5 6 7...10

中文翻译

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