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AT-30511-BLK

更新时间： 2024-11-05 22:35:59
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
10页 101K
描述
Low Current, High Performance NPN Silicon Bipolar Transistor

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AT-30511-BLK 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT包装说明：SMALL OUTLINE, R-PDSO-G4
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.16
Is Samacsys：N其他特性：HIGH RELIABILITY
最大集电极电流 (IC)：0.008 A集电极-发射极最大电压：5.5 V
配置：SINGLE最小直流电流增益 (hFE)：70
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G4
JESD-609代码：e0元件数量：1
端子数量：4最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

AT-30511-BLK 数据手册

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Low Current, High Performance  
NPN Silicon Bipolar Transistor  
Technical Data  
AT-30511  
AT-30533  
Features  
Description  
Optimized performance at 2.7 V  
makes these devices ideal for use  
in900MHz, 1.8GHz, and2.4GHz  
battery operated systems as an  
LNA, gain stage, buffer, oscillator,  
or active mixer. Typical amplifier  
designs at 900 MHz yield 1.3 dB  
noise figures with 13 dB or more  
associated gain at a 2.7 V, 1 mA  
bias. Voltage breakdowns are high  
enough for use at 5 volts. High  
gain capability at 1 V, 1 mA makes  
these devices a good fit for  
• High Performance Bipolar  
Transistor Optimized for  
Low Current, Low Voltage  
Operation  
• 900 MHz Performance:  
AT-30511:1.1dBNF,16 dB GA  
AT-30533:1.1dBNF,13 dB GA  
• Characterized for End-Of-  
Life Battery Use (2.7 V)  
• SOT-23 and SOT-143 SMT  
Plastic Packages  
Hewlett-Packard’sAT-30511and  
AT-30533arehighperformance  
NPN bipolar transistors that have  
been optimized for maximum fT at  
low voltage operation, making  
them ideal for use in battery  
powered applications in wireless  
markets. The AT-30533 uses the 3  
leadSOT-23, whiletheAT-30511  
places the same die in the higher  
performance 4 lead SOT-143. Both  
packages are industry standard,  
and compatible with high volume  
surface mount assembly  
• Tape-And-Reel Packaging  
Option Available[1]  
900 MHzpagerapplications.  
The AT-3 series bipolar transistors  
are fabricated using an optimized  
version of Hewlett- Packard’s  
10 GHzf T,30GHzfMAX Self-  
Aligned-Transistor (SAT) process.  
The die are nitride passivated for  
surface protection. Excellent  
device uniformity, performance  
and reliability are produced by the  
use of ion-implantation, self-  
alignment techniques, and gold  
metalization in the fabrication of  
these devices.  
techniques.  
Outline Drawing  
The 3.2 micron emitter-to-emitter  
pitch and reduced parasitic design  
of these transistors yields  
extremely high performance  
products that can perform a multi-  
plicity of tasks. The 5 emitter  
finger interdigitated geometry  
yields an extremely fast transistor  
with high gain and low operating  
currents.  
EMITTER COLLECTOR  
305  
BASE  
EMITTER  
SOT-143 (AT-30511)  
COLLECTOR  
305  
BASE  
EMITTER  
SOT-23 (AT-30533)  
Note:  
1. Refer to “Tape-and-Reel Packaging for  
Semiconductor Devices”.  
4-23  
5965-8918E  
1234567...10

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AT30533 ETC

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 		TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 10MA I(C) | SOT-23
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 		Low Current, High Performance NPN Silicon Bipolar Transistor
AT-30533BLK AGILENT

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 		Low Current, High Performance NPN Silicon Bipolar Transistor
AT-30533-BLK AGILENT

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 		Low Current, High Performance NPN Silicon Bipolar Transistor

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