Datasheet > AT-30533TR1

AT-30533TR1

更新时间： 2024-11-08 22:14:51

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管
页数	文件大小	规格书
10页	101K
描述
Low Current, High Performance NPN Silicon Bipolar Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT-30533TR1 数据手册

Low Current, High Performance

NPN Silicon Bipolar Transistor

Technical Data

AT-30511

AT-30533

Features

Description

Optimized performance at 2.7 V

makes these devices ideal for use

in900MHz, 1.8GHz, and2.4GHz

battery operated systems as an

LNA, gain stage, buffer, oscillator,

or active mixer. Typical amplifier

designs at 900 MHz yield 1.3 dB

noise figures with 13 dB or more

associated gain at a 2.7 V, 1 mA

bias. Voltage breakdowns are high

enough for use at 5 volts. High

gain capability at 1 V, 1 mA makes

these devices a good fit for

• High Performance Bipolar

Transistor Optimized for

Low Current, Low Voltage

Operation

• 900 MHz Performance:

AT-30511:1.1dBNF,16 dB G_A

AT-30533:1.1dBNF,13 dB G_A

• Characterized for End-Of-

Life Battery Use (2.7 V)

• SOT-23 and SOT-143 SMT

Plastic Packages

Hewlett-Packard’sAT-30511and

AT-30533arehighperformance

NPN bipolar transistors that have

been optimized for maximum f_Tat

low voltage operation, making

them ideal for use in battery

powered applications in wireless

markets. The AT-30533 uses the 3

leadSOT-23, whiletheAT-30511

places the same die in the higher

performance 4 lead SOT-143. Both

packages are industry standard,

and compatible with high volume

surface mount assembly

• Tape-And-Reel Packaging

Option Available^[1]

900 MHzpagerapplications.

The AT-3 series bipolar transistors

are fabricated using an optimized

version of Hewlett- Packard’s

10 GHzf _T,30GHzf_MAXSelf-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

techniques.

Outline Drawing

The 3.2 micron emitter-to-emitter

pitch and reduced parasitic design

of these transistors yields

extremely high performance

products that can perform a multi-

plicity of tasks. The 5 emitter

finger interdigitated geometry

yields an extremely fast transistor

with high gain and low operating

currents.

EMITTER COLLECTOR

305

BASE

EMITTER

SOT-143 (AT-30511)

COLLECTOR

305

BASE

EMITTER

SOT-23 (AT-30533)

Note:

1. Refer to “Tape-and-Reel Packaging for

Semiconductor Devices”.

4-23

5965-8918E

12 3 4 5 6 7...10

中文翻译

下载PDF

与AT-30533TR1相关器件

型号	品牌	获取价格	描述	数据表
AT-30533-TR1	AGILENT	获取价格	Low Current, High Performance NPN Silicon Bipolar Transistor
AT-30533-TR1G	AGILENT	获取价格	RF Small Signal Bipolar Transistor, 0.008A I(C), 1-Element, Ultra High Frequency Band, Sil
AT-30533-TR2G	AVAGO	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3
AT-306	HRS	获取价格	Fixed Attenuators (SMA Type)
AT-306(40)	HRS	获取价格	Fixed Attenuator, 0MHz Min, 18000MHz Max, ROHS COMPLIANT PACKAGE
AT307	ETC	获取价格	Analog IC
AT-307	ETC	获取价格	Voltage Variable Absorptive Attenuator， 19 dB
AT-307PIN	ETC	获取价格	Analog Attenuator
AT309	ETC	获取价格	Analog IC
AT-309	ETC	获取价格	Analog Attenuator

与AT-30533TR1相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

AT-30533TR1

AT-30533TR1 数据手册

与AT-30533TR1相关器件

与AT-30533TR1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT-30533TR1

AT-30533TR1 数据手册

与AT-30533TR1相关器件

与AT-30533TR1相关文章

您还可以找

您在本页遇到什么问题？