Datasheet > AT-30533TR1

AT-30533TR1

更新时间： 2024-09-15 22:14:51

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管
页数	文件大小	规格书
10页	101K
描述
Low Current, High Performance NPN Silicon Bipolar Transistor

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AT-30533TR1 数据手册

Low Current, High Performance

NPN Silicon Bipolar Transistor

Technical Data

AT-30511

AT-30533

Features

Description

Optimized performance at 2.7 V

makes these devices ideal for use

in900MHz, 1.8GHz, and2.4GHz

battery operated systems as an

LNA, gain stage, buffer, oscillator,

or active mixer. Typical amplifier

designs at 900 MHz yield 1.3 dB

noise figures with 13 dB or more

associated gain at a 2.7 V, 1 mA

bias. Voltage breakdowns are high

enough for use at 5 volts. High

gain capability at 1 V, 1 mA makes

these devices a good fit for

• High Performance Bipolar

Transistor Optimized for

Low Current, Low Voltage

Operation

• 900 MHz Performance:

AT-30511:1.1dBNF,16 dB G_A

AT-30533:1.1dBNF,13 dB G_A

• Characterized for End-Of-

Life Battery Use (2.7 V)

• SOT-23 and SOT-143 SMT

Plastic Packages

Hewlett-Packard’sAT-30511and

AT-30533arehighperformance

NPN bipolar transistors that have

been optimized for maximum f_Tat

low voltage operation, making

them ideal for use in battery

powered applications in wireless

markets. The AT-30533 uses the 3

leadSOT-23, whiletheAT-30511

places the same die in the higher

performance 4 lead SOT-143. Both

packages are industry standard,

and compatible with high volume

surface mount assembly

• Tape-And-Reel Packaging

Option Available^[1]

900 MHzpagerapplications.

The AT-3 series bipolar transistors

are fabricated using an optimized

version of Hewlett- Packard’s

10 GHzf _T,30GHzf_MAXSelf-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

techniques.

Outline Drawing

The 3.2 micron emitter-to-emitter

pitch and reduced parasitic design

of these transistors yields

extremely high performance

products that can perform a multi-

plicity of tasks. The 5 emitter

finger interdigitated geometry

yields an extremely fast transistor

with high gain and low operating

currents.

EMITTER COLLECTOR

305

BASE

EMITTER

SOT-143 (AT-30511)

COLLECTOR

305

BASE

EMITTER

SOT-23 (AT-30533)

Note:

1. Refer to “Tape-and-Reel Packaging for

Semiconductor Devices”.

4-23

5965-8918E

12 3 4 5 6 7...10

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