Datasheet > ASZM080120P

ASZM080120P

更新时间： 2024-11-12 18:07:07

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
7页	1783K
描述
TO-247-3

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中文翻译

获取价格

数据手册

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ASZM080120P 数据手册

ASZM080120P

N-Channel Silicon Carbide Power MOSFET

Product Summary

V_(BR)DSS

I_D@25℃

R_DS(on)MAX

98mΩ@20V

100mΩ@18V

1200V

41A

Feature

Application



Wide bandgap SiC MOSFET technology



Switch mode power supplies

Renewable energy

Low On-Resistance with High Blocking Voltage

Low Capacitances with High-Speed switching

Low reverse recovery(Qrr)

Motor drives

High voltage DC/DC converters

Package

Marking

Circuit diagram

ASZM080120P

XXXXXX

TO-247-3

Absolute maximum ratings (T_C=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DSmax

V_GSmax

V_GSOP

I_D

Test Condition

V_GS= 0V, I_DS=100µA

Value

1200

Unit

AC (f > 1 Hz)

Static

-10/+25

-5/+20

V_GS=20V,T_C=25℃

Continuous Drain Current

Pulsed Drain Current

V_GS=20V,T_C=100℃

I_D

181

Pulse with t_plimited by T_jmaxat 1 ms

Pulse with t_plimited by T_jmaxat 100 µs

I_DM

T_C=25℃

Power Dissipation

P_D

R_θJC

T_J

208

℃/W

℃

Thermal Resistance(Typ)

Junction Temperature

Storage Temperature

Junction-to-Case

0.72

-55 ~ +175

℃

T_STG

Document ID

Issued Date

2013/03/08

Revised Date

2024/01/31

Revision

Page.

Page 1

AS-3270070

12 3 4 5 6 7

中文翻译

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