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ASZM1R0170N PDF预览

ASZM1R0170N

更新时间: 2024-10-31 18:07:07
品牌 Logo 应用领域
安邦 - ANBON /
页数 文件大小 规格书
6页 1115K
描述
TO-263-7

ASZM1R0170N 数据手册

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ASZM1R0170N  
N-Channel Silicon Carbide Power MOSFET  
Product Summary  
ID@25  
V(BR)DSS  
RDS(on)TYP  
1700V  
800mΩ@18V  
7.3A  
Feature  
Application  
Wide bandgap SiC MOSFET technology  
Switch Mode Power Supplies  
Renewable Energy  
Low On-Resistance with High Blocking Voltage  
Low Capacitances with High-Speed switching  
Low reverse recovery(Qrr)  
Motor Drives  
High Voltage DC/DC Converters  
Package  
Marking  
Circuit diagram  
ASZM1R0170N  
XXXXXX  
TO-263-7  
Absolute maximum ratings (Tc=25unless otherwise noted)  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Gate-Source Voltage  
Symbol  
VDSmax  
VGSmax  
VGSOP  
ID  
Test Condition  
VGS = 0V, ID =100µA  
Value  
1700  
Unit  
V
AC (f > 1 Hz)  
-10/+25  
-4/+18  
7.3  
V
Static  
V
VGS=18V, TC=25  
VGS=18V, TC=100℃  
Pulse with tp limited by Tjmax at 1 ms  
A
Continuous Drain Current  
Pulsed Drain Current  
ID  
5
A
15  
24  
ID,pulse  
A
Pulse with tp limited by Tjmax at 100 µs  
TC=25℃  
Power Dissipation  
PD  
RθJC  
TJ  
60  
W
/W  
Thermal ResistanceTyp)  
Junction-to-Case  
2.5  
Junction Temperature  
Storage Temperature  
-55 ~ +175  
-55 ~ +175  
TSTG  
Document ID  
Issued Date  
2013/03/08  
Revised Date  
2024/02/27  
Revision  
B
Page.  
6
Page 1  
AS-3270088  

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