ASW320
5 ~ 3000 MHz MMIC Amplifier
Features
Description
The ASW320, a gain block amplifier MMIC, has a
high linearity, high gain, and high efficiency over a
wide range of frequency, being suitable for use in
both receiver and transmitter of telecommunication
systems up to 3 GHz. It has an active bias network
for stable current over temperature and process
variation. The amplifier is available in a SOT89
package and passes through the stringent DC, RF,
and reliability tests
22 dB Gain at 900 MHz
22 dBm P1dB
40.5 dBm Output IP3
2.3 dB NF
ASW320
MTTF > 100 Years
Single Supply
Package Style: SOT89
Typical Performance
(Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 )
Applications Circuit
Parameters
Frequency
Gain
Units
MHz
dB
Typical
350
23.0
-12
870
22.0
-12
-9
900
22.0
-9
1600
19.5
-7
900
22.0
-9
1600
19.5
-7
350 ~ 870 MHz (7.4 V)
900 ~ 1600 MHz (5 V & 6 V)
30 ~ 600 MHz (8 V)
S11
dB
S22
dB
-10
-8
-6
-8
-6
Output IP31)
Noise Figure
Output P1dB
Supply Voltage
Current
dBm
dB
41.5
2.6
41.5
2.6
40.5
2.3
22
39.0
2.6
42.5
2.4
24
41.0
2.7
dBm
mA
V
26
26
21
23
7.4
7.4
5.0
+120
5.0
6.0
+145
6.0
+148
+148
+120
+145
1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Testing Frequency
Gain
Units
MHz
dB
Min
Typ.
Max
900
22.0
-9
S11
dB
S22
dB
-8
Output IP3
Noise Figure
Output P1dB
Current
dBm
dB
40.5
2.3
22
Pin Configuration
dBm
mA
V
120
+5
Supply Voltage
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
Storage Temperature
Device Voltage
-40 to 85 C
-40 to 150 C
+8.5 V
Pin No.
Function
RF IN
1
2
3
GND
Operating Junction Temperature
Input RF Power (Continuous)*
Thermal Resistance
+150 C
RF OUT & Bias
+22 dBm
43 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
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ASB Inc.
sales@asb.co.kr
Tel: +82-42-528-7225
April 2017