ASW214
5 ~ 8000 MHz MMIC Amplifier
Features
Description
The ASW214, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
tems up to 8 GHz. The amplifier is available in a
SOT89 package and passes through the stringent
DC, RF, and reliability tests.
19.5 dB Gain at 900 MHz
16 dBm P1dB at 900 MHz
30 dBm Output IP3 at 900 MHz
5.5 dB NF at 900 MHz
MTTF > 100 Years
ASW214
Single Supply
Package Style: SOT89
Typical Performance
(Supply Voltage = +5 V, TA = +25 C, Z0 = 50 )
Parameters
Frequency
Gain
Units
MHz
dB
Typical
Application Circuit
900
19.5
-12.5
-11
2000
18.0
-9.0
-14
3500
15.0
-9.0
-10
5800
12.5
-14.0
-14
IF
S11
dB
500 ~ 3500 MHz
1700 ~ 2500 MHz
3300 ~ 3800 MHz
4000 ~ 6000 MHz
70 ~ 2700 MHz
S22
dB
Output IP31)
Noise Figure
Output P1dB
Current
dBm
dB
30.0
5.5
32.0
5.7
28.0
6.4
24.5
5.7
dBm
mA
V
16.0
52
17.0
52
14.5
52
13.5
52
Device Voltage
+4.8
+4.8
+4.8
+4.8
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
500 ~ 2700 MHz (3.3 V/ 35 mA)
Product Specifications
Parameters
Testing Frequency
Gain
Units
MHz
dB
Min
Typ.
900
19.5
-12.5
-11
Max
18.5
S11
dB
S22
dB
Output IP3
Noise Figure
Output P1dB
Current
dBm
dB
29
30
5.5
6.0
57
dBm
mA
V
15
47
16
52
Pin Configuration
Device Voltage
+4.8
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
Storage Temperature
-40 to 85 C
-40 to 150 C
+6 V
Pin No.
Function
RF IN
1
2
3
Device Voltage
GND
Operating Junction Temperature
Input RF Power (CW, 50 matched)*
Thermal Resistance
+150 C
25 dBm
RF OUT & Bias
194 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
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ASB Inc.
sales@asb.co.kr
Tel: +82-42-528-7225
April 2017