Datasheet > ASDM40R065NQ

ASDM40R065NQ

更新时间： 2024-09-16 17:15:43

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
7页	1623K
描述
PDFN5*6-8

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中文翻译

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数据手册

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ASDM40R065NQ 数据手册

ASDM40R065NQ

40V N-Channel MOSFET

Feature

⚫ Split Gate Trench Technology

Product Summary

⚫ Low R

DS(ON)

6.5

mΩ

⚫ Low Gate Charge

⚫ Low Gate Resistance

⚫ 100% UIS Tested

Application

R DS(on),Typ@ VGS=10 V

I D

⚫ Power Switching Application

DFN5*6-8

N-Channel

ABSOLUTE MAXIMUM RATINGS (T_A= 25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain - Source Voltage

Gate - Source Voltage

Continuous Drain Current¹

Pulsed Drain Current²

V_DS

V_GS

I_D

±20

T_C= 25℃

T_C= 100℃

I_D

I_DM

I_AS

144

Single Pulsed Avalanche Current³

Single Pulsed Avalanche Energy³

Power Dissipation⁵

E_AS

P_D

240

T_C= 25℃

Thermal Resistance from Junction to Ambient⁶

Thermal Resistance from Junction to Case

Junction Temperature

R_θJA

R_θJC

T_J

℃/W

℃

2.4

150

-55~ +150

Storage Temperature

T_STG

℃

www.ascendsemi.com

0755-86970486

NOV 2018 Version1.0

1/7

12 3 4 5 6 7

中文翻译

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