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AS7C3364FT32B-10TQI PDF预览

AS7C3364FT32B-10TQI

更新时间: 2024-02-22 03:51:07
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
19页 417K
描述
Standard SRAM, 64KX32, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

AS7C3364FT32B-10TQI 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:QFP包装说明:LQFP,
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.52最长访问时间:10 ns
其他特性:FLOW-THROUGH ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:32功能数量:1
端子数量:100字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX32封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

AS7C3364FT32B-10TQI 数据手册

 浏览型号AS7C3364FT32B-10TQI的Datasheet PDF文件第3页浏览型号AS7C3364FT32B-10TQI的Datasheet PDF文件第4页浏览型号AS7C3364FT32B-10TQI的Datasheet PDF文件第5页浏览型号AS7C3364FT32B-10TQI的Datasheet PDF文件第7页浏览型号AS7C3364FT32B-10TQI的Datasheet PDF文件第8页浏览型号AS7C3364FT32B-10TQI的Datasheet PDF文件第9页 
AS7C3364FT32B  
AS7C3364FT36B  
®
1
Write enable truth table (per byte)  
Function  
GWE BWE  
BWa  
X
BWb  
X
BWc  
BWd  
X
L
H
H
H
H
H
X
L
L
L
H
L
X
L
Write All Bytes  
L
L
L
Write Byte a  
L
H
H
L
H
Write Byte c and d  
H
H
L
X
X
X
H
X
Read  
H
H
H
1 Key: X = don’t care, L = low, H = high, n = a, b, c, d; BWE, BWn = internal write signal.  
Asynchronous Truth Table  
Operation  
Snooze mode  
ZZ  
H
L
OE  
X
I/O Status  
High-Z  
L
Dout  
Read  
L
H
High-Z  
Write  
L
X
Din, High-Z  
High-Z  
Deselected  
L
X
Notes:  
1. X means “Don’t Care”  
2. ZZ pin is pulled down internally  
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.  
4. Snooze mode means power down state of which stand-by current does not depend on cycle times  
5. Deselected means power down state of which stand-by current depends on cycle times  
Burst sequence table  
Interleaved burst address (LBO = 1)  
A1 A0 A1 A0 A1 A0 A1 A0  
Linear burst address (LBO = 0)  
A1 A0 A1 A0 A1 A0 A1 A0  
1st Address  
2nd Address  
3rd Address  
4th Address  
0 0  
0 1  
1 0  
1 1  
0 1  
0 0  
1 1  
1 0  
1 0  
1 1  
0 0  
0 1  
1 1  
1 0  
0 1  
0 0  
1st Address  
2nd Address  
3rd Address  
4th Address  
0 0  
0 1  
1 0  
1 1  
0 1  
1 0  
1 1  
1 0  
1 0  
1 1  
0 0  
0 1  
1 1  
0 0  
0 1  
1 0  
2/8/05; v.1.2  
Alliance Semiconductor  
P. 6 of 19  

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