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AS7C33256PFS32A-133TQCN PDF预览

AS7C33256PFS32A-133TQCN

更新时间: 2024-01-17 13:30:50
品牌 Logo 应用领域
ALSC 存储内存集成电路静态存储器
页数 文件大小 规格书
20页 528K
描述
3.3V 256K x 32/36 pipelined burst synchronous SRAM

AS7C33256PFS32A-133TQCN 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP,
针数:100Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.35最长访问时间:10 ns
其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e3长度:20 mm
内存密度:8388608 bit内存集成电路类型:STANDARD SRAM
内存宽度:32功能数量:1
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX32封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):245认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

AS7C33256PFS32A-133TQCN 数据手册

 浏览型号AS7C33256PFS32A-133TQCN的Datasheet PDF文件第1页浏览型号AS7C33256PFS32A-133TQCN的Datasheet PDF文件第3页浏览型号AS7C33256PFS32A-133TQCN的Datasheet PDF文件第4页浏览型号AS7C33256PFS32A-133TQCN的Datasheet PDF文件第5页浏览型号AS7C33256PFS32A-133TQCN的Datasheet PDF文件第6页浏览型号AS7C33256PFS32A-133TQCN的Datasheet PDF文件第7页 
AS7C33256PFS32A  
AS7C33256PFS36A  
®
1,2  
8 Mb Synchronous SRAM products list  
Org  
Part Number  
Mode  
PL-SCD  
PL-SCD  
PL-SCD  
PL-DCD  
PL-DCD  
PL-DCD  
FT  
Speed  
512KX18  
256KX32  
256KX36  
512KX18  
256KX32  
256KX36  
512KX18  
256KX32  
256KX36  
512KX18  
256KX32  
256KX36  
512KX18  
256KX32  
256KX36  
AS7C33512PFS18A  
AS7C33256PFS32A  
AS7C33256PFS36A  
AS7C33512PFD18A  
AS7C33256PFD32A  
AS7C33256PFD36A  
AS7C33512FT18A  
AS7C33256FT32A  
AS7C33256FT36A  
AS7C33512NTD18A  
AS7C33256NTD32A  
AS7C33256NTD36A  
AS7C33512NTF18A  
AS7C33256NTF32A  
AS7C33256NTF36A  
166/133 MHz  
166/133 MHz  
166/133 MHz  
166/133 MHz  
166/133 MHz  
166/133 MHz  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
166/133 MHz  
166/133 MHz  
166/133 MHz  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
FT  
FT  
NTD-PL  
NTD-PL  
NTD-PL  
NTD-FT  
NTD-FT  
NTD-FT  
1 Core Power Supply: VDD = 3.3V + 0.165V  
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O  
VDDQ = 2.5V + 0.125V for 2.5V I/O  
PL-SCD  
PL-DCD  
FT  
:
:
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect  
Pipelined Burst Synchronous SRAM - Double Cycle Deselect  
Flow-through Burst Synchronous SRAM  
1
TM  
NTD -PL  
:
:
Pipelined Burst Synchronous SRAM with NTD  
TM  
NTD-FT  
Flow-through Burst Synchronous SRAM with NTD  
1NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of  
their respective owners.  
11/30/04, v.3.1  
Alliance Semiconductor  
P. 2 of 20  

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