Datasheet > AS5C512K8F-55L/H

AS5C512K8F-55L/H

更新时间： 2024-10-29 06:37:55

品牌	Logo	应用领域
AUSTIN		内存集成电路静态存储器
页数	文件大小	规格书
16页	402K
描述
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT

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AS5C512K8F-55L/H 技术参数

生命周期：	Active	包装说明：	DFP,
Reach Compliance Code：	compliant	风险等级：	5.58
最长访问时间：	55 ns	JESD-30 代码：	R-CDFP-F36
长度：	23.368 mm	内存密度：	4194304 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	8
功能数量：	1	端子数量：	36
字数：	524288 words	字数代码：	512000
工作模式：	ASYNCHRONOUS	组织：	512KX8
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	DFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK
并行/串行：	PARALLEL	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
端子形式：	FLAT	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	12.954 mm
Base Number Matches：	1

AS5C512K8F-55L/H 数据手册

SRAM

AS5C512K8

Austin Semiconductor, Inc.

512K x 8 SRAM

PIN ASSIGNMENT

(Top View)

HIGH SPEED SRAM with

REVOLUTIONARY PINOUT

36-Pin SOJ (DJ & ECJ)

36-Pin CLCC (EC)

AVAILABLE AS MILITARY

SPECIFICATIONS

•SMD 5962-95600

•SMD 5962-95613

•MIL-STD-883

FEATURES

• Ultra High Speed Asynchronous Operation

• Fully Static, No Clocks

• Multiple center power and ground pins for improved

noise immunity

• Easy memory expansion with CE\ and OE\

options

• All inputs and outputs are TTL-compatible

• Single +5V Power Supply +/- 10%

• Data Retention Functionality Testing (Contact Factory)

• Cost Efficient Plastic Packaging

• Extended Testing Over -55ºC to +125ºC for plastics

• Plastic 36 pin PSOJ is fully compatible with the

Ceramic 36 pin SOJ

36-Pin Flat Pack (F)

• 3.3V Future Offering

OPTIONS

• Timing

MARKING

15ns access

17ns access

20ns access

25ns access

35ns access

45ns access

-15

-17

-20

-25

-35

-45

GENERAL DESCRIPTION

• Operating Temperature Ranges

Military (-55^oC to +125^oC)

Industrial (-40^oC to +85^oC)

The AS5C512K8 is a high speed SRAM. It offers flexibility in

high-speed memory applications, with chip enable (CE\) and output

enable (OE\) capabilities. These features can place the outputs in

High-Z for additional flexibility in system design.

• Package(s)

Ceramic LCC

Ceramic Flatpack

Plastic SOJ

Writing to these devices is accomplished when write enable (WE\)

and CE\ inputs are both LOW. Reading is accomplished when WE\

remains HIGH and CE\ and OE\ go LOW.

As a option, the device can be supplied offering a reduced power

standby mode, allowing system designers to meet low standby power

requirements. This device operates from a single +5V power supply

and all inputs and outputs are fully TTL-compatible.

The AS5C512K8DJ offers the convenience and reliability of the

AS5C512K8 SRAM and has the cost advantage of a durable plastic.

The AS5C512K8DJ is footprint compatible with 36 pin CSOJ

package of the SMD 5692-95600.

ECJ

No. 210

No. 307

No. 903

No.503

Ceramic SOJ

• 2V data retention/low power

• Radiation Tolerant (EPI)

L (Consult Factory)

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS5C512K8

Rev. 4.5 7/01

12 3 4 5 6 7...16

中文翻译

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与AS5C512K8F-55L/H相关器件

型号	品牌	获取价格	描述	数据表
AS5C512K8SOJ-12/IT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8SOJ-12/XT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8SOJ-15/IT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8SOJ-15/XT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8SOJ-17/IT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8SOJ-17/XT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8SOJ-17L/IT	MICROSS	获取价格	Standard SRAM, 512KX8, 17ns, CMOS, CDSO36, CERAMIC, SOJ-36
AS5C512K8SOJ-20/IT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8SOJ-20/XT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8SOJ-25/IT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT

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