是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | SOJ |
包装说明: | 0.400 INCH, CERAMIC, SOJ-32 | 针数: | 32 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.B |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.62 |
最长访问时间: | 15 ns | JESD-30 代码: | R-CDSO-J32 |
JESD-609代码: | e0 | 长度: | 20.828 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | SOJ | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 3.6576 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | TIN LEAD |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.414 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AS5LC1008DCJ-15/XT | AUSTIN |
获取价格 |
128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout | |
AS5LC1008DCJ-20/IT | AUSTIN |
获取价格 |
128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout | |
AS5LC1008DCJ-20/XT | AUSTIN |
获取价格 |
128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout | |
AS5LC1008DGC-12L/XT | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, TSOP2-32 | |
AS5LC1008DGC-15L/XT | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, TSOP2-32 | |
AS5LC1008DGC-20L/XT | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, TSOP2-32 | |
AS5LC1008DGCR-10L/IT | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, TSOP2-32 | |
AS5LC1008DGCR-12L/IT | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, TSOP2-32 | |
AS5LC1008DGCR-15L/IT | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, TSOP2-32 | |
AS5LC1008DGCR-20L/IT | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, TSOP2-32 |