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AS5LC1008DCJ-12/XT PDF预览

AS5LC1008DCJ-12/XT

更新时间: 2024-10-29 06:37:55
品牌 Logo 应用领域
AUSTIN 内存集成电路静态存储器
页数 文件大小 规格书
10页 522K
描述
128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout

AS5LC1008DCJ-12/XT 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:SOJ
包装说明:SOJ,针数:32
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.62
Is Samacsys:N最长访问时间:12 ns
JESD-30 代码:R-CDSO-J32JESD-609代码:e0
长度:20.828 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:3.6576 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:TIN LEAD端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.414 mm
Base Number Matches:1

AS5LC1008DCJ-12/XT 数据手册

 浏览型号AS5LC1008DCJ-12/XT的Datasheet PDF文件第2页浏览型号AS5LC1008DCJ-12/XT的Datasheet PDF文件第3页浏览型号AS5LC1008DCJ-12/XT的Datasheet PDF文件第4页浏览型号AS5LC1008DCJ-12/XT的Datasheet PDF文件第5页浏览型号AS5LC1008DCJ-12/XT的Datasheet PDF文件第6页浏览型号AS5LC1008DCJ-12/XT的Datasheet PDF文件第7页 
SRAM  
AS5LC1008  
Austin Semiconductor, Inc.  
128K x 8 SRAM  
PIN ASSIGNMENT  
High-Speed CMOS SRAM with  
(Top View)  
3.3V Revolutionary Pinout  
32-Pin, 400-mil  
Plastic SOJ (DJ) & Ceramic SOJ (DCJ)  
FEATURES  
• High-speed access times of 10, 12, 15 and 20 ns  
• High-performance, low-power CMOS process  
• Multiple center power and ground pins for greater noise  
immunity  
• Easy memory expansion with CE\ and OE\ options  
• CE\ power-down  
• Fully static operation: no clock or refresh required  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
A0  
A1  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A16  
A15  
A14  
A13  
OE\  
2
A2  
3
A3  
4
CE\  
I/O 0  
I/O 1  
Vcc  
GND  
I/O 2  
I/O 3  
WE\  
A4  
5
6
I/O 7  
I/O 6  
GND  
Vcc  
7
8
9
10  
11  
12  
13  
14  
15  
16  
I/O 5  
I/O 4  
A12  
A11  
A10  
A9  
OPTIONS  
• Timing  
MARKING  
10ns access  
12ns access  
15ns access  
20ns access  
-10  
-12  
-15  
-20  
A5  
A6  
A7  
A8  
• Package  
Plastic SOJ (32-pin, 400-mil)  
*Ceramic SOJ (32-pin, 400-mil)  
DJ  
DCJ  
No. 906  
No. 501  
PIN FUNCTIONS  
• Operating Temperature Ranges  
-Military (-55oC to +125oC)  
-Industrial (-40oC to +85oC)  
PIN  
A0 - A16  
CE\  
DESCRIPTION  
Address Inputs  
Chip Enable Input  
Output Enable Input  
Write Enable Input  
XT  
IT  
OE\  
*Consult Factory, Possible Future Offering  
WE\  
I/O0 - I/O7 Bidirectional Ports  
GENERAL DESCRIPTION  
The ASI AS5LC1008 is a very high-speed, low power,  
131,072-word by 8-bit CMOS static RAM in revolutionary  
pinout. The AS5LC1008 is fabricated using high-performance  
CMOS technology. This highly reliable process coupled with  
innovative circuit design techniques, yields higher performance  
and low power consumption devices.  
VCC  
Power  
GND  
Ground  
When CE\ is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be reduced  
down to 250µW (typical) with CMOS input levels.  
The AS5LC1008 operates from a single 3.3V power supply  
and all inputs are TTL-compatible.  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS5LC1008  
Rev. 1.1 06/05  
1

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