Datasheet > AS4C4M4EOQ

AS4C4M4EOQ

更新时间： 2022-01-19 04:33:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
16页	354K
描述
4M x 4 CMOS QuadCAS DRAM (EDO) family

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中文翻译

获取价格

数据手册

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AS4C4M4EOQ 数据手册

AS4C4M4EOQ

AS4C4M4E1Q

Hyper page mode cycle

-50

-60

Symbol Parameter

Min

–

Max

–

Min

–

Max

–

Unit

Notes

t_CPWD

t_CPA

CAS precharge to WE delay time

Access time from CAS precharge

RAS pulse width

100K

–

100K

–

t_RASP

t_DOH

t_REZ

Previous data hold time from CAS

Output buffer turn off delay from RAS

Output buffer turn off delay from WE

Output buffer turn off delay from OE

Hyper page mode cycle time

–

t_WEZ

t_OEZ

t_HPC

t_HPRWCHyper page mode RMW cycle

t_RHCPRAS hold time from CAS

–

Output enable

-50

-60

Symbol Parameter

Min

Max

–

Min

Max

–

Unit

Notes

t_CLZ

t_ROH

t_OEA

t_OED

t_OEZ

t_OEH

t_OLZ

t_OFF

CAS to output in Low Z

RAS hold time referenced to OE

OE access time

–

OE to data delay

Output buffer turnoff delay from OE

OE command hold time

OE to output in Low Z

–

Output buffer turn-off time

8,10

Self-refresh cycle

-50

-60

Std

Symbol

Parameter

Min

Max

Min

Max

–

Unit

µs

Notes

RAS pulse width

(CBR self refresh)

t_RASS

100

–

100

105

-50

RAS precharge time

(CBR self refresh)

t_RPS

–

CAS hold time

(CBR self refresh)

t_CHS

-50

3/22/01; v.1.0

Alliance Semiconductor

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