AS4C4M4F0
AS4C4M4F1
®
5V 4M×4 CMOS DRAM (Fast Page mode)
Features
• Organization: 4,194,304 words × 4 bits
• High speed
• TTL-compatible, three-state I/O
• JEDEC standard package
- 300 mil, 24/26-pin SOJ
- 300 mil, 24/26-pin TSOP
• Latch-up current ≥ 200 mA
• ESD protection ≥ 2000 mV
- 50/60 ns RAS access time
- 25/30 ns column address access time
- 12/15 ns CAS access time
• Low power consumption
- Active: 908 mW max
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode
• Industrial and commercial temperature available
• Refresh
- 4096 refresh cycles, 64 ms refresh interval for
AS4C4M4F0
- 2048 refresh cycles, 32 ms refresh interval for
AS4C4M4F1
- RAS-only or CAS-before-RAS refresh or self-refresh
Pin arrangement
Pin designation
Pin(s)
A0 to A11
RAS
Description
SOJ
TSOP
Address inputs
Row address strobe
Column address strobe
Write enable
Input/output
Output enable
Power
VCC
GND
I/O3
I/O2
CAS
OE
VCC
GND
I/O3
I/O2
CAS
OE
1
2
3
4
5
6
26
25
24
23
22
21
1
2
3
4
5
6
26
25
24
23
22
21
I/O0
I/O1
WE
I/O0
I/O1
WE
CAS
RAS
RAS
*NC/A11
A9
*NC/A11
A9
WE
A10
A8
A7
A6
A5
A4
A10
8
9
10
11
12
13
A8
A7
A6
A5
A4
GND
I/O0 to I/O3
OE
8
9
10
11
12
13
19
18
17
16
15
14
19
18
17
16
15
14
A0
A1
A2
A3
VCC
A0
A1
A2
A3
VCC
VCC
GND
GND
Ground
*NC on 2K refresh version; A11 on 4K refresh version
Selection guide
AS4C4M4F0-50
AS4C4M4F1-50
AS4C4M4F0-60
AS4C4M4F1-60
Symbol
Unit
ns
Maximum RAS access time
tRAC
tCAA
tCAC
tOEA
tRC
50
25
12
13
85
25
135
1.0
60
Maximum column address access time
Maximum CAS access time
30
ns
15
ns
Maximum output enable (OE) access time
Minimum read or write cycle time
Minimum fast page mode cycle time
Maximum operating current
15
ns
100
30
ns
tPC
ns
ICC1
ICC5
120
1.0
mA
mA
Maximum CMOS standby current
4/11/01; v.0.9
Alliance Semiconductor
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