Datasheet > AS4C4M4EOQ

AS4C4M4EOQ

更新时间： 2022-01-19 04:33:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
16页	354K
描述
4M x 4 CMOS QuadCAS DRAM (EDO) family

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AS4C4M4EOQ 数据手册

AS4C4M4EOQ

AS4C4M4E1Q

AC parameters common to all waveforms

-50

-60

Symbol Parameter

Min

Max

Min

100

Max

Unit

Notes

t_RC

Random read or write cycle time

–

t_RP

RAS precharge time

t_RAS

t_CAS

t_RCD

t_RAD

t_RSH

t_CSH

t_CRP

t_ASR

t_RAH

t_T

RAS pulse width

10K

–

10K

–

CAS pulse width

RAS to CAS delay time

RAS to column address delay time

CAS to RAS hold time

RAS to CAS hold time

CAS to RAS precharge time

Row address setup time

Row address hold time

Transition time (rise and fall)

Refresh period

–

32/64

–

32/64

–

4,5

t_REF

t_CP

–

17/16

CAS precharge time

t_RAL

t_ASC

t_CAH

Column address to RAS lead time

Column address setup time

Column address hold time

–

Read cycle

-50

-60

Symbol Parameter

Min

–

Max

–

Min

–

Max

–

Unit

Notes

t_RAC

t_CAC

t_AA

Access time from RAS

Access time from CAS

–

6,13

7,13

Access time from address

–

t_RCS

t_RCH

t_RRH

Read command setup time

Read command hold time to CAS

Read command hold time to RAS

–

3/22/01; v.1.0

Alliance Semiconductor

P. 6 of 16

1...3 4 567 8 9...16

下载PDF

与AS4C4M4EOQ相关器件

型号	品牌	描述	获取价格	数据表
AS4C4M4F0	ALSC	5V 4M×4 CMOS DRAM (Fast Page mode)	获取价格
AS4C4M4F0-50	ALSC	5V 4M×4 CMOS DRAM (Fast Page mode)	获取价格
AS4C4M4F0-50JC	ALSC	5V 4M×4 CMOS DRAM (Fast Page mode)	获取价格
AS4C4M4F0-50JI	ALSC	5V 4M×4 CMOS DRAM (Fast Page mode)	获取价格
AS4C4M4F0-50TC	ALSC	5V 4M×4 CMOS DRAM (Fast Page mode)	获取价格
AS4C4M4F0-50TI	ALSC	5V 4M×4 CMOS DRAM (Fast Page mode)	获取价格