AS4C1M16E5
®
Write cycle
-45
-50
-60
Symbol
tWCS
tWCH
tWP
Parameter
Min
0
Max
–
Min
0
Max
–
Min
0
Max
–
Unit Notes
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
ns
ns
ns
ns
ns
ns
ns
14
14
10
10
10
8
–
10
10
10
8
–
10
10
10
10
0
–
–
–
–
tRWL
tCWL
tDS
–
–
–
–
–
–
0
–
0
–
–
15
15
tDH
Data-in hold time
8
–
8
–
10
–
Read-modify-write cycle
-45
-50
-60
Symbol
tRWC
Parameter
Min
105
65
Max
–
Min
113
67
Max
–
Min
135
77
Max
–
Unit Notes
ns
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
tRWD
–
–
–
ns
ns
ns
14
14
14
tCWD
tAWD
30
–
32
–
35
–
40
–
42
–
47
–
Refresh cycle
-45
-50
-60
Symbol
tCSR
Parameter
Min
5
Max
–
Min
5
Max
–
Min
5
Max
–
Unit Notes
CAS setup time (CAS-before-RAS)
CAS hold time (CAS-before-RAS)
RAS precharge to CAS hold time
ns
ns
ns
6
6
tCHR
8
–
8
–
10
0
–
tRPC
0
–
0
–
–
CAS precharge time
(CBR counter test)
tCPT
10
–
10
–
10
–
ns
4/11/01; v.1.0
Alliance Semiconductor
P. 6 of 22