Datasheet > 存储 > DRAM> AS4C1M16E5-45TC

AS4C1M16E5-45TC

更新时间： 2024-02-08 08:18:00

品牌	Logo	应用领域
ALSC		动态存储器
页数	文件大小	规格书
22页	601K
描述
5V 1M×16 CMOS DRAM (EDO)

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数据手册

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AS4C1M16E5-45TC 数据手册

AS4C1M16E5

Absolute maximum ratings

Parameter

Symbol

V_in

Min

-1.0

-65

–

Max

Unit

Input voltage

+7.0

V_CC+ 0.5

+7.0

+150

260 × 10

Input voltage (DQs)

V_DQ

Power supply voltage

Storage temperature (plastic)

Soldering temperature × time

Power dissipation

V_CC

T_STG

°C

^oC × sec

T_SOLDER

P_D

–

Short circuit output current

I_out

–

Truth table

Addresses

Operation

Standby

RAS

LCAS

H to X

UCAS

H to X

t_R

t_C

DQ0 to DQ15

High-Z

Notes

Word read

ROW

COL

Data out

Lower byte

read

Lower byte,

Upper byte, Data out

ROW

COL

Upper byte

read

Lower byte,

Data out, Upper byte

Word

(early) write

Data in

Lower byte

(early) write

Lower byte, Data in,

Upper byte, High-Z

Upper byte

(early) write

Lower byte, High-Z,

Upper byte, Data in

Read write

EDO read

H to L L to H ROW

COL

n/a

Data out, Data in

Data out

1,2

1st cycle

2nd cycle

Any cycle

1st cycle

2nd cycle

1st cycle

2nd cycle

H to L

L to H

H to L

L to H

H to L

ROW

n/a

Data out

n/a

Data out

ROW

n/a

COL

Data in

EDO write

Data in

H to L H to L L to H ROW

Data out, Data in

1,2

EDO

read write

H to L H to L L to H

n/a

ROW

RAS only

refresh

n/a

High Z

CBR refresh

H to L

4/11/01; v.1.0

Alliance Semiconductor

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