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AS29LV800B-70RTC PDF预览

AS29LV800B-70RTC

更新时间: 2024-02-04 16:24:51
品牌 Logo 应用领域
ANADIGICS 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
25页 440K
描述
3V 1M】8/512K】16 CMOS Flash EEPROM

AS29LV800B-70RTC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1, TSSOP48,.8,20
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.28最长访问时间:70 ns
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,15端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.1 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AS29LV800B-70RTC 数据手册

 浏览型号AS29LV800B-70RTC的Datasheet PDF文件第1页浏览型号AS29LV800B-70RTC的Datasheet PDF文件第2页浏览型号AS29LV800B-70RTC的Datasheet PDF文件第3页浏览型号AS29LV800B-70RTC的Datasheet PDF文件第5页浏览型号AS29LV800B-70RTC的Datasheet PDF文件第6页浏览型号AS29LV800B-70RTC的Datasheet PDF文件第7页 
AS29LV800  
March 2001  
®
Item  
Description  
Temporarily disables sector protection for in-system data changes to protected sectors. Apply +10V to RESET  
to activate temporary sector unprotect mode. During temporary sector unprotect mode, program protected  
sectors by selecting the appropriate sector address. All protected sectors revert to protected state on removal  
of +10V from RESET.  
Temporary  
sector  
unprotect  
Resets the interal state machine to read mode. If device is programming or erasing when RESET = L, data  
may be corrupted.  
RESET  
Deep  
power down  
Hold RESET low to enter deep power down mode (<1 µA). Recovery time to start of first read cycle is 50ns.  
Enabled automatically when addresses remain stable for 300ns. Typical current draw is 1 µA. Existing data is  
available to the system during this mode. If an address is changed, automatic sleep mode is disabled and new  
data is returned within standard access times.  
Automatic  
sleep mode  
Flexible sector architecture  
Bottom boot sector architecture (AS29LV800B)  
Top boot sector architecture (AS29LV800T)  
Size  
Size  
Sector  
0
×8  
×16  
(Kbytes)  
×8  
×16  
(Kbytes)  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
32  
8
00000h–03FFFh  
04000h–05FFFh  
06000h–07FFFh  
08000h–0FFFFh  
10000h–1FFFFh  
20000h–2FFFFh  
30000h–3FFFFh  
40000h–4FFFFh  
50000h–5FFFFh  
60000h–6FFFFh  
70000h–7FFFFh  
80000h–8FFFFh  
90000h–9FFFFh  
A0000h–AFFFFh  
B0000h–BFFFFh  
C0000h–CFFFFh  
D0000h–DFFFFh  
E0000h–EFFFFh  
F0000h–FFFFFh  
00000h–01FFFh  
02000h–02FFFh  
03000h–03FFFh  
04000h–07FFFh  
08000h–0FFFFh  
10000h–17FFFh  
18000h–1FFFFh  
20000h–27FFFh  
28000h–2FFFFh  
30000h–37FFFh  
38000h–3FFFFh  
40000h–47FFFh  
48000h–4FFFFh  
50000h–57FFFh  
58000h–5FFFFh  
60000h–67FFFh  
68000h–6FFFFh  
70000h–77FFFh  
78000h–7FFFFh  
16  
8
00000h–0FFFFh  
10000h–1FFFFh  
20000h–2FFFFh  
30000h–3FFFFh  
40000h–4FFFFh  
50000h–5FFFFh  
60000h–6FFFFh  
70000h–7FFFFh  
80000h–8FFFFh  
90000h–9FFFFh  
A0000h–AFFFFh  
B0000h–BFFFFh  
C0000h–CFFFFh  
D0000h–DFFFFh  
E0000h–EFFFFh  
F0000h–F7FFFh  
F8000h–F9FFFh  
FA000h–FBFFFh  
FC000h–FFFFFh  
00000h–07FFFh  
08000h–0FFFFh  
10000h–17FFFh  
18000h–1FFFFh  
20000h–27FFFh  
28000h–2FFFFh  
30000h–37FFFh  
38000h–3FFFFh  
40000h–47FFFh  
48000h–4FFFFh  
50000h–57FFFh  
58000h–5FFFFh  
60000h–67FFFh  
68000h–6FFFFh  
70000h–77FFFh  
78000h–7BFFFh  
7C000h–7CFFFh  
7D000h–7DFFFh  
7E000h–7FFFFh  
1
2
8
3
32  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
8
16  
In word mode, there are one 8K word, two 4K word, one 16K word, and fifteen 32K word sectors. Address range is A18–A-1 if BYTE = V ; address range is  
IL  
A18–A0 if BYTE = V  
.
IH  
3/22/01; V.1.0  
Alliance Semiconductor  
P. 4 of 25  

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