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AS29LV016BRG-100/XT PDF预览

AS29LV016BRG-100/XT

更新时间: 2024-01-17 13:51:13
品牌 Logo 应用领域
AUSTIN 闪存内存集成电路光电二极管
页数 文件大小 规格书
40页 402K
描述
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory

AS29LV016BRG-100/XT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.25Is Samacsys:N
最长访问时间:100 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e4长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,31端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.035 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:PALLADIUM GOLD
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AS29LV016BRG-100/XT 数据手册

 浏览型号AS29LV016BRG-100/XT的Datasheet PDF文件第34页浏览型号AS29LV016BRG-100/XT的Datasheet PDF文件第35页浏览型号AS29LV016BRG-100/XT的Datasheet PDF文件第36页浏览型号AS29LV016BRG-100/XT的Datasheet PDF文件第38页浏览型号AS29LV016BRG-100/XT的Datasheet PDF文件第39页浏览型号AS29LV016BRG-100/XT的Datasheet PDF文件第40页 
COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016  
AC CHARACTERISTICS  
555 for program  
2AA for erase  
PA for program  
SA for sector erase  
555 for chip erase  
Data# Polling  
Addresses  
PA  
tWC  
tAS  
tAH  
tWH  
WE#  
tGHEL  
OE#  
tWHWH1 or 2  
tCP  
CE#  
tWS  
tCPH  
tDS  
tBUSY  
tDH  
DQ7#  
DOUT  
Data  
tRH  
A0 for program  
55 for erase  
PD for program  
30 for sector erase  
10 for chip erase  
RESET#  
RY/BY#  
Notes:  
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data  
written to the device.  
2. Figure indicates the last two bus cycles of the command sequence.  
3. Word mode address used as an example.  
Figure 23. Alternate CE# Controlled Write Operation Timings  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016  
Rev. 2.1 10/08  
37  

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