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AS29LV016JBRG-55/ET PDF预览

AS29LV016JBRG-55/ET

更新时间: 2024-02-08 21:59:56
品牌 Logo 应用领域
AUSTIN 闪存内存集成电路光电二极管
页数 文件大小 规格书
40页 408K
描述
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory

AS29LV016JBRG-55/ET 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TSOP1包装说明:TSOP1, TSSOP56,.8,20
针数:48Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.47最长访问时间:55 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-XDSO-G48长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,31端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:1MX16
封装主体材料:UNSPECIFIED封装代码:TSOP1
封装等效代码:TSSOP56,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

AS29LV016JBRG-55/ET 数据手册

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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
16 Megabit (2M x 8-Bit / 1M x 16-Bit)  
CMOS 3.0 Volt-Only Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
PERFORMANCE CHARACTERISTICS  
High Performance  
ARCHITECTURALADVANTAGES  
Single Power Supply Operation  
– Full voltage range: 2.7 to 3.6 volt read and write operations for  
battery-powered applications  
Access times as fast as 55 ns  
Extended temperature range (–40°C to +125°C)  
Manufactured on 110 nm Process Technology  
Military temperature range (–55°C to +125°C)  
Fully compatible with 200 nm AS29LV016  
Ultra Low Power Consumption (typical values at 5 MHz)  
0.2 µA Automatic Sleep mode current  
Secured Silicon Sector region  
0.2 µA standby mode current  
7 mA read current  
128-word/256-byte sector for permanent, secure identification  
through an 8-word/16-byte random Electronic Serial Number  
accessible through a command sequence  
20 mA program/erase current  
May be programmed and locked at the factory or by the customer  
Cycling Endurance: 1,000,000 cycles per sector typical  
Flexible Sector Architecture  
Data Retention: 20 years typical  
One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64  
Kbyte sectors (byte mode)  
SOFTWARE FEATURES  
CFI (Common Flash Interface) Compliant  
One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32  
Kword sectors (word mode)  
Provides device-specific information to the system, allowing host  
software to easily reconfigure for different Flash devices  
Sector Group Protection Features  
A hardware method of locking a sector to prevent any program or  
Erase Suspend/Erase Resume  
erase operations within that sector  
Suspends an erase operation to read data from, or program data  
Sectors can be locked in-system or via programming equipment  
to, a sector that is not being erased, then resumes the erase  
operation  
Temporary Sector Unprotect feature allows code changes in  
previously locked sectors  
Data# Polling and Toggle Bits  
Provides a software method of detecting program or erase operation  
completion  
Unlock Bypass Program Command  
Reduces overall programming time when issuing multiple program  
command sequences  
HARDWARE FEATURES  
Ready/Busy# Pin (RY/BY#)  
Top or Bottom Boot Block Configurations Available  
Compatibility with JEDEC standards  
Provides a hardware method of detecting program or erase cycle  
completion  
Pinout and software compatible with single-power supply Flash  
Superior inadvertent write protection  
Hardware Reset Pin (RESET#)  
Hardware method to reset the device to reading array data  
PACKAGE OPTIONS  
48-pin TSOP  
WP# input pin  
For boot sector devices: at VIL, protects first or last 16 Kbyte  
sector depending on boot configuration (top boot or bottom boot)  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
1

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