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AS29F010CW-12/IT PDF预览

AS29F010CW-12/IT

更新时间: 2024-11-07 02:51:35
品牌 Logo 应用领域
AUSTIN /
页数 文件大小 规格书
22页 242K
描述
128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY

AS29F010CW-12/IT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:0.600 INCH, CERAMIC, DIP-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.66
最长访问时间:120 nsJESD-30 代码:R-CDIP-T32
JESD-609代码:e0长度:42.418 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED编程电压:5 V
认证状态:Not Qualified座面最大高度:5.1308 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:15.24 mmBase Number Matches:1

AS29F010CW-12/IT 数据手册

 浏览型号AS29F010CW-12/IT的Datasheet PDF文件第2页浏览型号AS29F010CW-12/IT的Datasheet PDF文件第3页浏览型号AS29F010CW-12/IT的Datasheet PDF文件第4页浏览型号AS29F010CW-12/IT的Datasheet PDF文件第5页浏览型号AS29F010CW-12/IT的Datasheet PDF文件第6页浏览型号AS29F010CW-12/IT的Datasheet PDF文件第7页 
FLASH  
AS29F010  
Austin Semiconductor, Inc.  
PIN ASSIGNMENT  
128K x 8 FLASH  
UNIFORM SECTOR 5.0V FLASH MEMORY  
(Top View)  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
• MIL-STD-883  
32-PIN Ceramic DIP (CW)  
NC  
A16  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
32 VCC  
31 WE\  
30 NC  
29 A14  
28 A13  
1
2
3
4
5
6
7
8
• SMD 5962-96690  
FEATURES  
• Single 5.0V ±10% power supply operation  
• Low power consumption:  
! 12 mA typical active read current  
! 30 mA typical program/erase current  
! <1 µA typical standby current  
• Flexible sector architecture  
! Eight 16Kbyte sectors  
! Any combination of sectors can be erased  
! Full chip erase  
• Sector protection  
27  
A8  
26 A9  
25 A11  
24 OE\  
9
23  
A10  
10  
11  
12  
13  
14  
15  
16  
22 CE\  
21 DQ7  
20 DQ6  
19  
18  
17  
DQ5  
DQ4  
DQ3  
VSS  
! Hardware-based feature that disables/reenables program  
and erase operations in any combination of sectors  
! Sector protection/unprotection can be implemented  
using standard PROM programming equipment  
• Embedded Algorithms  
! Embedded Erase algorithm automatically pre-programs  
and erases the chip or any combination of designated  
sectors  
! Embedded Program algorithm automatically programs  
and verifies data at specified address  
• Erase Suspend/Resume  
OPTIONS  
MARKING  
• Timing  
50ns*  
60ns  
-5  
-6  
70ns  
90ns  
120ns  
150ns  
-7  
-9  
-12  
-15  
! Supports reading data from a sector not being erased  
• Minimum 1 million erase cycles guaranteed per sector  
• Compatible with JEDEC standards  
! Pinout and software compatible with single-power-  
supply FLASH  
• Package  
Ceramic DIP (600 mil)  
! Superior inadvertent write protection  
• Data\ Polling and Toggle Bits  
CW  
! Provides a software method of detecting program or  
erase cycle completion  
• Temperature  
Industrial Temperature (-40°C to +85°C) IT  
Military Temperature (-55°C to +125°C) XT  
883C Processing (-55°C to +125°C)  
QML Processing (-55°C to +125°C)  
883C  
Q
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
NOTES: *50ns (-5) option available with IT, XT, and 883C options  
only.  
AS29F010  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 0.3 10/02  
1

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