Datasheet > AS2016NP06S

AS2016NP06S

更新时间： 2024-09-21 18:07:07

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
9页	1781K
描述
DFN5*6-8L

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AS2016NP06S 数据手册

AS2016NP06S

N and P-Channel Complementary Power MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

I_D

V_(BR)DSS

R_DS(on)MAX

60mΩ@-10V

72mΩ@-4.5V

I_D

28mΩ@10V

32mΩ@4.5V

60V

20A

-60V

-16A

Feature

Application



High density cell design for ultra low RDS(on)

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS



H-bridge

Inverters

Excellent package for good heat dissipation

Special process technology for high ESD capability

Package

Circuit diagram

DFN5X6-8L

Marking

D1 D1 D2 D2

60NP2016G

XXXXX

S1 G1

S2 G2

Document ID

AS-3150445

Issued Date

2015/05/09

Revised Date

2023/08/10

Revision

Page.

Page 1

12 3 4 5 6 7...9

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