Datasheet > AS081C100W

AS081C100W

更新时间： 2024-11-07 01:16:31

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
2页	137K
描述
High Power Stacked Infrared Laser Diode Array

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AS081C100W 数据手册

AS081C100W

TECHNICAL DATA

High Power Stacked Infrared Laser Diode Array

Features

Applications

•

Output Power: 100 W

780-830 nm Emission Wavelength

Spectral Width: ≤4 nm

High Reliability, High Efficiency

CW stack arrays adopt micro-channel package

•

Laser Pumping

Medical Usage

High power laser diode applications

Specifications (25°C)

Item

Optical Specifications

CW Output Power

Output Power / Bar

Array Length

Center Wavelength

Wavelength Tolerance

Spectral Width

Symbol

Value

Unit

P_O

P_S

100

780-830

λ_C

± 5

≤ 4

Δλ

Package Style

Micro Channel

Bar Length

Number of Bars

1.6

Wavelength Temperature Coefficient

Beam Divergence

0.3

40x8

nm/°C

deg

θ_┴×θ_║

Electrical Specifications

Slope Efficiency

Conversion Efficiency

Threshold Current

Operating Current

Operating Voltage

Absolute Maximum Ratings

Reverse Voltage

Operating Temperature

Storage Temperature

E_S

N_S

I_TH

I_F

≥ 1

≥ 40%

≤ 5

≤ 25

≤ 10

W/A

U_F

U_R

T_OP

T_STG

2.5

+10 … +40

-40 ... +85

°C

20.09.2010

AS081C100W

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