Datasheet > AS081Q600W

AS081Q600W

更新时间： 2022-02-26 12:36:08

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
2页	137K
描述
High Power Stacked Infrared Laser Diode Array

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AS081Q600W 数据手册

AS081Q600W

TECHNICAL DATA

High Power Stacked Infrared Laser Diode Array

Features

Applications

•

Output Power: 600 W qCW

780-830 nm Emission Wavelength

Spectral Width: ≤4 nm

High Reliability, High Efficiency

QCW stack can be designed according to the

customer of non-standard products heat sink

package

•

Laser Pumping

Medical Usage

High power laser diode applications

Specifications (25°C)

Item

Optical Specifications

qCW Output Power

qCW Output Power / Bar

Array Length

Center Wavelength

Wavelength Tolerance

Spectral Width

Symbol

Value

Unit

P_O

P_S

600

780-830

λ_C

± 5

≤ 4

Δλ

Package Style

Micro Channel

Bar Length

Number of Bars

0.5

Wavelength Temperature Coefficient

Beam Divergence

0.3

40x8

nm/°C

deg

θ_┴×θ_║

Electrical Specifications

Slope Efficiency

Conversion Efficiency

Threshold Current

Operating Current

Operating Voltage

E_S

N_S

I_TH

I_F

≥ 1

≥ 40%

≤ 25

≤ 90

≤ 20

W/A

U_F

Absolute Maximum Ratings

Reverse Voltage

Operating Temperature

Storage Temperature

U_R

T_OP

T_STG

2.5

+10 … +40

-40 ... +85

°C

20.09.2010

AS081Q600W

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