APTM50DAM17G
VDSS = 500V
DSon = 17m typ @ Tj = 25°C
ID = 180A @ Tc = 25°C
Boost chopper
MOSFET Power Module
R
Application
AC and DC motor control
VBUS
CR1
Switched Mode Power Supplies
Power Factor Correction
OUT
Features
Q2
Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
G2
S2
0/VBUS
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
180
135
720
±30
20
V
Tc = 25°C
Tc = 80°C
ID
Continuous Drain Current
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
m
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
1250
51
50
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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