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APTM50DHM38 PDF预览

APTM50DHM38

更新时间: 2024-01-23 14:31:23
品牌 Logo 应用领域
ADPOW 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 293K
描述
Asymmetrical - Bridge MOSFET Power Module

APTM50DHM38 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.22
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):2500 mJ外壳连接:ISOLATED
配置:PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):90 A最大漏源导通电阻:0.045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUFM-X8
JESD-609代码:e1湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):360 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APTM50DHM38 数据手册

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APTM50DHM38  
VDSS = 500V  
Asymmetrical - bridge  
RDSon = 38mmax @ Tj = 25°C  
MOSFET Power Module  
ID = 90A @ Tc = 25°C  
Application  
Sꢁ Welding converters  
Sꢁ Switched Mode Power Supplies  
Sꢁ Switched Reluctance Motor Drives  
Features  
Sꢁ Power MOS 7® MOSFETs  
-
-
-
-
-
Low RDSon  
Low input and Miller capacitance  
Low gate charge  
Avalanche energy rated  
Very rugged  
Sꢁ Kelvin source for easy drive  
Sꢁ Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
Sꢁ High level of integration  
OUT1  
G1  
S1  
VBUS  
0/VBUS  
Benefits  
Sꢁ Outstanding performance at high frequency operation  
Sꢁ Direct mounting to heatsink (isolated package)  
Sꢁ Low junction to case thermal resistance  
Sꢁ Low profile  
S4  
G4  
OUT2  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
Continuous Drain Current  
500  
90  
V
Tc = 25°C  
Tc = 80°C  
ID  
A
67  
IDM  
VGS  
Pulsed Drain current  
360  
±30  
38  
Gate - Source Voltage  
Drain - Source ON Resistance  
V
mꢀ  
W
RDSon  
PD  
IAR  
EAR  
EAS  
Maximum Power Dissipation  
Tc = 25°C  
694  
46  
50  
2500  
Avalanche current (repetitive and non repetitive)  
A
Repetitive Avalanche Energy  
mJ  
Single Pulse Avalanche Energy  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 – 6  
APT website – http://www.advancedpower.com  

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