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APTM50DHM35 PDF预览

APTM50DHM35

更新时间: 2024-01-07 16:25:57
品牌 Logo 应用领域
ADPOW 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 292K
描述
Asymmetrical - Bridge MOSFET Power Module

APTM50DHM35 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.22
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3000 mJ
外壳连接:ISOLATED配置:PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):99 A
最大漏源导通电阻:0.039 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XUFM-X8JESD-609代码:e1
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):396 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APTM50DHM35 数据手册

 浏览型号APTM50DHM35的Datasheet PDF文件第2页浏览型号APTM50DHM35的Datasheet PDF文件第3页浏览型号APTM50DHM35的Datasheet PDF文件第4页浏览型号APTM50DHM35的Datasheet PDF文件第5页浏览型号APTM50DHM35的Datasheet PDF文件第6页 
APTM50DHM35  
VDSS = 500V  
Asymmetrical - bridge  
RDSon = 35mmax @ Tj = 25°C  
MOSFET Power Module  
ID = 99A @ Tc = 25°C  
Application  
Sꢁ Welding converters  
Sꢁ Switched Mode Power Supplies  
Sꢁ Switched Reluctance Motor Drives  
Features  
Sꢁ Power MOS 7® MOSFETs  
-
-
-
-
-
Low RDSon  
Low input and Miller capacitance  
Low gate charge  
Avalanche energy rated  
Very rugged  
Sꢁ Kelvin source for easy drive  
Sꢁ Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
Sꢁ High level of integration  
OUT1  
Benefits  
G1  
S1  
VBUS  
0/VBUS  
Sꢁ Outstanding performance at high frequency operation  
Sꢁ Direct mounting to heatsink (isolated package)  
Sꢁ Low junction to case thermal resistance  
Sꢁ Low profile  
S4  
G4  
OUT2  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
Continuous Drain Current  
500  
99  
V
Tc = 25°C  
Tc = 80°C  
ID  
A
74  
IDM  
VGS  
Pulsed Drain current  
396  
±30  
35  
Gate - Source Voltage  
Drain - Source ON Resistance  
V
mꢀ  
W
RDSon  
PD  
IAR  
EAR  
EAS  
Maximum Power Dissipation  
Tc = 25°C  
781  
51  
50  
3000  
Avalanche current (repetitive and non repetitive)  
A
Repetitive Avalanche Energy  
mJ  
Single Pulse Avalanche Energy  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 – 6  
APT website – http://www.advancedpower.com  

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