Datasheet > APTLGL325A1208G-Module

APTLGL325A1208G-Module

更新时间： 2024-11-28 14:55:39

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
7页	499K
描述
IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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APTLGL325A1208G-Module 数据手册

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APTLGL325A1208G

V_CES= 1200V

I_C= 325A @ Tc = 80°C

Phase leg

Intelligent Power Module

Application



Motor control

Uninterruptible Power Supplies

Switched Mode Power Supplies

Amplifier

Features



Trench + Field Stop IGBT 4 Technology

- Low voltage drop

- Low leakage current

- Low switching losses

- Soft recovery parallel diodes

- Low diode VF

- RBSOA and SCSOA rated

 Integrated Fail Safe IGBT Protection (Driver)

Top Bottom input signals Interlock

Isolated DC/DC Converter

 Low stray inductance

 M5 power connectors

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Stable temperature behavior

VBUS

0/VBUS

OUT

 Very rugged

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Very high noise immunity

(common mode rejection > 25kV/µs)

 Galvanic Isolation: 3750V for the optocoupler

2500V for the transformer

 5V logic level with Schmitt-trigger Input

 Single V_DD=5V supply required

 Secondary auxiliary power supplies internally generated

(15V, -6V)

 Optocoupler qualified to AEC-Q100 test guidelines

 RoHS compliant

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

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