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APTGT300SK170G PDF预览

APTGT300SK170G

更新时间: 2024-11-15 04:49:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 双极性晶体管
页数 文件大小 规格书
5页 247K
描述
Buck chopper Trench + Field Stop IGBT Power Module

APTGT300SK170G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLANGE MOUNT, R-XUFM-X5
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
其他特性:AVALANCHE RATED外壳连接:ISOLATED
最大集电极电流 (IC):400 A集电极-发射极最大电压:1700 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-XUFM-X5
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:5
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):1100 ns标称接通时间 (ton):450 ns

APTGT300SK170G 数据手册

 浏览型号APTGT300SK170G的Datasheet PDF文件第2页浏览型号APTGT300SK170G的Datasheet PDF文件第3页浏览型号APTGT300SK170G的Datasheet PDF文件第4页浏览型号APTGT300SK170G的Datasheet PDF文件第5页 
APTGT225A170G  
Phase leg  
Trench + Field Stop IGBT®  
Power Module  
VCES = 1700V  
IC = 225A @ Tc = 80°C  
Application  
VBUS  
Welding converters  
Q1  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
G1  
E1  
OUT  
Features  
Trench + Field Stop IGBT® Technology  
Q2  
-
-
-
-
-
-
-
-
Low voltage drop  
G2  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
E2  
Low leakage current  
0/VBUS  
Avalanche energy rated  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
High level of integration  
G1  
E1  
VBUS  
0/VBUS  
OUT  
Benefits  
Stable temperature behavior  
Very rugged  
E2  
G2  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1700  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
340  
225  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
450  
±20  
1250  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C 450A @ 1600V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  

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