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APT6035SVRG PDF预览

APT6035SVRG

更新时间: 2024-11-25 21:01:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关脉冲晶体管
页数 文件大小 规格书
4页 193K
描述
Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

APT6035SVRG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
风险等级:5.25雪崩能效等级(Eas):1210 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.35 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):72 A
认证状态:Not Qualified表面贴装:YES
端子面层:PURE MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT6035SVRG 数据手册

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APT6035SVRG 替代型号

型号 品牌 替代类型 描述 数据表
APT6038SFLLG MICROSEMI

类似代替

Power Field-Effect Transistor, 17A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Met
APT6029SLLG MICROSEMI

类似代替

Power Field-Effect Transistor, 21A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Met
APT6029SFLLG MICROSEMI

功能相似

暂无描述

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