是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.62 |
雪崩能效等级(Eas): | 1500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.019 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 300 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Pure Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT10M20BLL | ADPOW |
获取价格 |
Power Field-Effect Transistor, 92A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met | |
APT10M20SLL | ADPOW |
获取价格 |
Power Field-Effect Transistor, 92A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met | |
APT10M25 | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10M25BNFR | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD | |
APT10M25BNFR-BUTT | ADPOW |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
APT10M25BNFR-GULLWING | ADPOW |
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Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
APT10M25BNR | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD | |
APT10M25BNR-BUTT | MICROSEMI |
获取价格 |
75A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | |
APT10M25BNR-GULLWING | ADPOW |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
APT10M25BNR-GULLWING | MICROSEMI |
获取价格 |
75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |