5秒后页面跳转
APT10SC120S PDF预览

APT10SC120S

更新时间: 2024-01-23 13:50:55
品牌 Logo 应用领域
ADPOW /
页数 文件大小 规格书
3页 126K
描述
Rectifier Diode,

APT10SC120S 技术参数

生命周期:TransferredReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

APT10SC120S 数据手册

 浏览型号APT10SC120S的Datasheet PDF文件第2页浏览型号APT10SC120S的Datasheet PDF文件第3页 
1
2
1- Cathode  
2 - Anode  
D3PAK  
Back of Case -Cathode  
APT10SC120B 1200V 10A  
APT10SC120S 1200V 10A  
1
2
2
1
SILICON CARBIDE SCHOTTKY RECTIFIER DIODE  
PRODUCT FEATURES  
PRODUCT BENEFITS  
PRODUCT APPLICATIONS  
Schottky Barrier  
Majority Carrier Only  
Wide Energy Gap  
High Breakdown Electric  
Field  
High Thermal Conductivity  
High Pulse Capability  
Positive Vf Temp Coefficient  
Low Forward Voltage  
No dv/dt Limitation  
Popular TO-247 Package or  
Surface Mount D3PAK Package  
Switching Losses Nearly  
Eliminated zero recoveryTM  
Greatly Reduced Turn On Loss  
Improved Overall Efficiency  
Enables Higher Freq. Operation  
Simplify Or Eliminate Snubber  
Circuits  
High Temperature Operation  
Low Leakage Current  
Radiation Hardness  
High Power Density  
PFC And Forward Topologies  
Hard Or Soft Switched  
Topologies  
High Frequency  
High Performance  
Switch Mode  
Power Supplies (SMPS)  
Thermally Stable Paralleling  
MAXIMUMRATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
APT10SC120B_S  
Symbol Characteristic / Test Conditions  
UNIT  
VR  
Maximum D.C. Reverse Voltage  
VRRM  
VRWM  
IF(AV)  
Maximum Peak Repetitive Reverse Voltage  
Maximum Working Peak Reverse Voltage  
Maximum Average Forward Current (TC =143°C, Duty Cycle = 0.5)  
RMS Forward Current (Square wave, 50% duty)  
Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10µs)  
Power Dissipation (TC = 25°C)  
1200  
Volts  
10  
23  
Amps  
IF(RMS)  
IFSM  
100  
PTOT  
TJ,TSTG  
TL  
Watts  
°C  
223  
Operating and StorageTemperature Range  
-55 to 175  
300  
Lead Temperature for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
MIN  
TYP  
1.6  
2.1  
2.6  
MAX  
UNIT  
IF = 10A, TJ = 25°C  
1.8  
VF  
Forward Voltage  
IF = 20A, TJ = 25°C  
Volts  
IF = 10A, TJ = 175°C  
VR = VR Rated, TJ = 25°C  
VR = VR Rated, TJ = 175°C  
3.0  
400  
IRM  
Maximum Reverse Leakage Current  
µA  
2000  
APT Website - http://www.advancedpower.com  
zero recoveryTM, is a Trademark of CREE INC.  

与APT10SC120S相关器件

型号 品牌 描述 获取价格 数据表
APT10SC60BHB MICROSEMI Rectifier Diode

获取价格

APT10SC60G MICROSEMI Rectifier Diode

获取价格

APT10SC60G ADPOW Rectifier Diode, Schottky, 1 Phase, 1 Element, 9A, 600V V(RRM), Silicon Carbide, TO-257AA,

获取价格

APT10SC60K MICROSEMI Rectifier Diode

获取价格

APT10SC60KCT MICROSEMI Rectifier Diode

获取价格

APT10SC60SA MICROSEMI Rectifier Diode

获取价格