Datasheet > APM4953

APM4953

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	929K
描述
SOP-8

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数据手册

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APM4953 数据手册

AO4953

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES

 Low on-resistance:V_DS=-30V,I_D=-5.1A,R_DS(ON)≤55mΩ@V_GS=-10V

 Low gate charge

 For load switch or in PWM applications.

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Continuous drain current

Pulsed drain current(Note 1)

Power dissipation

Symbol

Value

-30

±20

-5.1

-20

Unit

V_GS

I_D

I_DM

P_D

2.5

Thermal resistance from Junction to ambient (Note2)

Junction temperature

Storage temperature

R_θ

T_J

T_STG

150

-55 ~+150

°C/W

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Off Characteristics

Symbol

Min

Typ

Max

Unit

Conditions

V(BR)DSS

I_DSS

I_GSS

-30

-33

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

On Characteristics(Note3)

Gate-threshold voltage

V =0V, I =-250μA

-1

±100

μA V_DS=-24V,

nA V_DS=0V,

V^GS=0V

V^GS=±20V

-1.1

-1.6

-2.1

mΩ

V_GS(th)

R_DS(ON)

g_FS

V =V , I =-250μA

=-10V, I =-5.1A

Drain-source on-resistance

VGS=-4.5V, ID=-4.2A

VDS=-15V, ID=-4.5A

Forward transconductance

Drain-Source Diode Characteristics(Note3)

Diode forward voltage

Dynamic Characteristics (Note4)

Input capacitance

-1.2

V_SD

IS=-5.1A, VGS=0V

520

130

C_iss

C_oss

C_rss

V_{DS=-15V, VGS=0V, f=1MHz}

Output capacitance

Reverse transfer capacitance

Switching Characteristics (Note 4)

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

2.2

Q_g

Q_gs

Q_gd

t_d(on)

t_r

VGS=-10V,VDS=-15V,ID=-5.1A

VGS=-10V, VDD=-15V,

RGEN=6Ω, ID=-1A

t_d(off)

t_f

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

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E-mail:hkt@heketai.com

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