Datasheet > APM60R180F

APM60R180F

更新时间： 2024-09-16 17:15:51

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1146K
描述
TO-220F

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APM60R180F 数据手册

APM60R180F

N-Channel 600V (D-S) Power MOSFET

Description

Applications

The APM60R180F is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage Super Junction technology. This high density pro-

cess and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance.



AC/DC load switch

SMPS

LED power

Marking Information

Features

XXXX = Date Code



VDS: 600V

60R180F

XXXX

ID (@VGS=10V): 18A

RDS_ON(@VGS=10V) : < 180mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

TO-220F

P/N

Package Type

TO-220F

Packaging

APM60R180F

Tube

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Drain-source Voltage

Symbol

Maximum

Unit

VDS

VGS

600

±30

Gate-source Voltage

Tc=25°C

Continuous Drain Current ⁽¹⁾⁽⁴⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

11.5

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

54.6

125

1.00

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Aug. 2022, Rev. 0.0

1 of 5

www.appliedpowermicro.com

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