Datasheet > APM-6849PA

APM-6849PA

更新时间： 2024-09-16 02:52:39

品牌	Logo	应用领域
MARKIMICROWAVE		/
页数	文件大小	规格书
14页	1174K
描述
GaAs Broadband Low Phase Noise Amplifier

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APM-6849PA 数据手册

GaAs Broadband Low Phase Noise Amplifier

APM-6849

1. Device Overview

1.1 General Description

The APM-6849 is a single stage broadband, low phase noise LO driver amplifier designed

to provide saturated +21 dBm output power. This amplifier uses GaAs HBT technology for

low phase noise, and provides industry leading -170 dBc/Hz at 10 kHz offset from carrier

frequency. The amplifier is also highly efficient with 21% peak PAE at 5 GHz input

frequency and low DC current draw. It is optimized to provide enough power to drive the

LO port of an S-diode mixer (2 – 20 GHz) and an H/L-diode mixer (2 - 32 GHz). This

amplifier is operational with a variety of bias conditions for both low and high-power

applications.

1.3 Applications

1.2 Features

▪

Mobile test and measurement

▪

-170 dBc/Hz phase noise at

equipment

10 kHz offset frequency

+21 dBm output power

Low DC power consumption

Positive-only biasing

▪

Radar and satellite

▪

communications

▪

5G Transceivers

Driver amplifier for S, H, and L – diode mixers

Suitable as a T3 drive

No sequencing required

Unconditionally stable

Integrated DC blocks – No

bias-tees or off-chip blocking

required

▪

Small Signal S-parameter .s2p Files:

APM-6849CH.s2p

1.4 Functional Block Diagram

1.5 Part Ordering Options¹

Part

Product

Lifecycle

Export

Classification

Description

Number

Package Green Status

APM-6849CH

APM-6849PA

Wire Bondable Die Bare Die

RoHS

Active

EAR99

Connectorized

Module

¹Refer to our website for a list of definitions for terminology presented in this table.

P a g e 1 | R e v . D

12 3 4 5 6 7...14

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