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AP70L02GS PDF预览

AP70L02GS

更新时间: 2024-11-21 03:19:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 190K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP70L02GS 技术参数

生命周期:Contact Manufacturer零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (ID):66 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):210 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP70L02GS 数据手册

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AP70L02GS/P  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low On-resistance  
BVDSS  
RDS(ON)  
ID  
25V  
9mΩ  
66A  
D
S
Simple Drive Requirement  
Fast Switching  
G
Description  
The Advanced Power MOSFETs from APEC provide the designer  
with the best combination of fast switching, ruggedized device  
design, low on-resistance and cost-effectiveness.  
G
D
S
TO-263(S)  
The TO-263 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP70L02GP) is available for low-profile applications.  
G
D
TO-220(P)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
25  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
±20  
66  
Continuous Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
42  
A
210  
66  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
0.53  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-case  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
1.9  
62  
Rthj-amb  
Data & specifications subject to change without notice  
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