Datasheet > AP70SL500AJB

AP70SL500AJB

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	102K
描述
TO-251S

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AP70SL500AJB 数据手册

AP70SL500AJB

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

V_DS@ T_j,max.

750V

0.5Ω

8.8A

▼ Fast Switching Characteristic

R_DS(ON)

▼ Simple Drive Requirement

I_D

▼ RoHS Compliant & Halogen-Free

Description

AP70SL500A series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-251S(JB)

The TO-251S short lead package is preferred for all commercial-

industrial through-hole applications without lead-cutted.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

700

Units

V_DS

V_GS

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

8.8

5.6

dv/dt

MOSFET dv/dt Ruggedness (V_DS= 0 …400V )

Total Power Dissipation

V/ns

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

78.1

1.13

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Peak Diode Recovery dv/dt⁵

Storage Temperature Range

Operating Junction Temperature Range

V/ns

℃

dv/dt

T_STG

-55 to 150

T_J

℃

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

1.6

Rthj-a

110

Data & specifications subject to change without notice

201505191

12 3 4 5

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